Quantum Dots for Future Nanophotonic Devices: Lateral Ordering, Position, and Number Control

Abstract

published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User

Study of electron-related intersubband optical properties in three coupled quantum wells wires with triangular transversal section

“…Low-dimensional configurations on the base of heterostructures like quantum wells (QW), quantum dots (QD), quantum well wires (QWW), etc., became a popular basis for the various kinds of optical and electrical devices [2]. Lately especial attention has been given to the problem of well organized lowdimensional objects, which opens new perspectives for the manipulation of electronic and optical properties of matter and thus the possibility of creating devices on the base of new effects [3]. The new technological methods are developed based on standard technologies for producing semiconductor heterostructures like molecular beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD), allowing to control mutual positions and orientation of nano-size objects within heterostructures; for example, vertically stacked InGaAs/GaAs(001) QWW and QD chains were prepared using MBE method [4] and vertical artificial molecular structures formed by two vertically aligned InAs QDs [5].…”

“…In such a system it is very important to control the size of the dots themselves, and their spread, or just the distance between them [3]. Technical advance in the production of nano-complexes with a given position led to the boost of experimental [6] and theoretical [7] investigation of such kind of objects.…”

“…Theoretical studies of isolated triangular QWWs were reported [11]. Still with the recent technological advances in ordering, position and number control of the heterojunction-based nanoobjects [3,12] , the problem of theoretical study of complex quantum-coupled systems of simple nanoobjects becomes more and more actual. The task of the present work is to investigate the possible ensemble effect on the intersubband optical properties of the quantum coupled system of three triangular QWWs.…”

Optical anisotropy in InP string-like aligned quantum dots

“…Lateral composition modulation (LCM) in compound semiconductors is an example of the consequence of a strain-induced heterostructure [1][2][3] wherein different atoms cross-penetrate and develop a periodic modulation of the quantum structure along the lateral [110] crystal direction; hence, the [1][2][3][4][5][6][7][8][9][10] crystal direction becomes the plane of the well and the barrier. Such lateral semiconductor heterostructures exhibit pronounced optical properties such as optical polarization anisotropy or spectral energy shifts along the [110] and the [1][2][3][4][5][6][7][8][9][10] directions due to the biaxial strain fields [4][5][6]. Another example is the growth of Stranski-Krastanov (SK)-mode self-assembled quantum dots (QDs).…”

Combining selective area growth and self-organized strain engineering for site-controlled local InAs/InP quantum dot arrays

“…However, in addition to wavelength control, lateral ordering and position control are key challenges for future applications [3]. Selective-area growth of truncated InP pyramids has been widely used for the site-controlled InAs QD growth by metal organic vapor phase epitaxy (MOVPE) [4][5][6] and chemical beam epitaxy (CBE) [7].…”