Quantum dots-in-a-well infrared photodetectors for long wavelength infrared detection

Spectral broadening and electron–photon coupling in III–V infrared detectors of low dimensional quantum confined system

“…However, the photocurrent spectrum dramatically changes as photon density increases by one more order. Comparison between simulation in this work and experimental data of photoresponse spectra reported by Hoglund et al [33] reveals excellent agreement of photocurrent spectrum broadening. Fig.…”

“…Fig. 10 shows the comparison between simulation result done in this thesis and experimentally observed photoresponse spectrum reported by Hoglund et al [33] for the GaAs/InGaAs/InAs Dot-in-a-well structure. Fig.…”

Tunable far infrared detection using quantum rings-in-well intersubband photodetectors

“…The peak responsivity for the far IR range and at aforementioned temperature is higher compared to other previously reported tunable photodetectors (Majumdar et al 2002b;Fig. 4 photoconductive gain versus bias for different volume concentration of traps in 100 K with e A = 5 9 10 11 , trap free band mobility l 0 = 1 9 10 4 Table 1 Some of parameters used in our simulation Parameter Value Parameter Value hc fi 5 meV l eff 2 9 10 -10 m r 20 meV N D 5 9 10 10 cm -2 l 0 1 9 10 4 cm 2 V/s V s 1 9 10 8 cm/s Höglund et al 2006;Krishna 2005). Figure 6 shows that the peak responsivity increases with applied bias as a result of increased photocurrent gain.…”

InAs/GaAs p – i – p quantum dots‐in‐a‐well infrared photodetectors operating beyond 200 K

“…Introduction: Self-assembled InAs quantum dots (QDs) grown on GaAs have demonstrated excellent carrier confinement and δ-function-like density of states with important applications, including infrared photodetectors (IPs) and infrared sources [1][2][3]. In particular, InAs/GaAs QDIPs have been extensively investigated due to their advantageous properties, such as sensitivity to normal incident infrared radiation and weak thermionic coupling between the ground state and excited states, compared to quantum well IPs (QWIPs), resulting in reduced dark current.…”

“…In particular, InAs/GaAs QDIPs have been extensively investigated due to their advantageous properties, such as sensitivity to normal incident infrared radiation and weak thermionic coupling between the ground state and excited states, compared to quantum well IPs (QWIPs), resulting in reduced dark current. In the past few years, the intersubband photoresponse of n-type QD detector structures have been the subject of intense research [3][4][5][6]. However, high-temperature operation of n-type QDIPs has still remained a challenging problem although the hydrogenbased treatment processes were conducted to suppress the dark current [5,6].…”