Quantum drift-diffusion model for IMPATT devices

Acharyya, Aritra; Chatterjee, Subhashri; Goswami, Jayabrata; Banerjee, Suranjana; Banerjee, J. P.

doi:10.1007/s10825-014-0595-7

Cited by 19 publications

(8 citation statements)

References 21 publications

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“…The noise measure of the diodes sharply decreases with the increase of operating frequency. The multiplication region width of the diodes decreases with the increase of operating frequency . Thus the narrower multiplication region or avalanche region widths cause less amount of random impact ionization in higher frequency diodes.…”

Section: Characteristics Of G‐impatt Sourcesmentioning

confidence: 99%

1.0–10.0 THz Radiation from Graphene Nanoribbon Based Avalanche Transit Time Sources

Acharyya

2019

Physica Status Solidi (a)

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The possibilities of terahertz frequency generation by using graphene nanoribbon (GNR) based avalanche transit time (ATT) sources are investigated in this paper. The most promising candidate of ATT device family, i.e., the impact avalanche transit time (IMPATT) diode is chosen for the present study. Parallel connected GNR based IMPATT structures with inherent power combining capability are proposed and simulated by using self-consistent quantum drift-diffusion model based in-house simulation codes in order to study the static, high frequency and noise performance of those at different millimeter-wave and terahertz frequency bands. The detailed study reveals that the in-build power combined GNR IMPATT sources are capable of performing more efficiently than the IMPATT sources based on some other popular semiconductor materials as well as some state-of-the-art terahertz radiators within the terahertz frequency band from 1 to 10 THz.

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Section: Characteristics Of G‐impatt Sourcesmentioning

confidence: 99%

1.0–10.0 THz Radiation from Graphene Nanoribbon Based Avalanche Transit Time Sources

Acharyya

2019

Physica Status Solidi (a)

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“…[ 24–28 ] The parameters describing the structure and the doping concentrations of HM and HT DDR IMPATTs as mentioned before are distinctly considered for design at 500 GHz for Al m Ga 1‐m N∼GaN, which are tabulated in Table A meticulous scrutiny is carried out to study the thermal performance of heat sink [ 29 ] required to limit the temperature increase at the junction to avoid thermal runaway. An iterative method [ 30 ] is used for the dc simulation of the HT and HM devices considered here. The method is laid on two factors: location of the maximum electric field and its value at that point.…”

Section: Discussionmentioning

confidence: 99%

“…End results of all the HM and HT structures considered here are designed using a drift‐diffusion model and double‐iterative field maximum simulation method. [ 30 ] Primary device equations are solved considering the constraints at the boundary of the depletion layer [ 22 ] and substituting modulation factor to be zero to obtain the static properties of the device.…”

Section: Simulated Outputs For Ht Al04ga06n∼gan and Its Hm Counterpartsmentioning

confidence: 99%

Bias Current Modulation of DC and RF Properties of Al_mGa_1‐m∼GaN Heterojunction IMPATT at Sub‐Millimeter Wave Frequency

Banerjee¹

2023

Macromolecular Symposia

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Large signal RF properties of double drift region (DDR) Impact AvalancheTransit Time (IMPATT) device based on Al m Ga 1-m ∼GaN heterojunction (HT) are investigated and their variation with bias currents has been presented here. These RF properties and their modulation will significantly validate the acceptability of the particular HT in the sub-millimeter wave frequency domain. Avalanche noise plays the prime ground for making the IMPATT diode basically noisy and tunneling decays the performance of the device, as we move towards the higher frequency range like the sub-millimeter frequency. These setbacks can be done with if the homojunction (HM) is replaced by heterojunction. This authenticates the choice of heterojunction over homojunction. Here, the author takes 500 GHz as the frequency of concern in the sub-millimeter wave range. Here, two complementary heterojunctions of Al m Ga 1-m ∼GaN is taken with m = 0.4 or the mole fraction of Al in the alloy being 40% and their RF results are compared with two homojunctions of GaN and AlGaN for double drift region (DDR) IMPATT diode. Outcomes indicate that HT diodes surpass the high-frequency performance of HM diodes if compared on the basis of dc to RF conversion efficiency and output power due to the influence of large amplitude ac signal. It is also observed that with increasing bias voltage dependent current, which is varied from 20 × 10 8 to 40 × 10 8 Am −2 , the efficiency of conversion together with the power output increases. These results will be very important for further research in this domain.

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“…Various DC parameters of the diode, which governs the microwave properties of the diode, can be obtained by analyzing the electric field and carrier current profile. The basic process involved is to determine the solutions of Poisson's equation and current continuity equation . Analytical solution of these equations under realistic conditions is an extremely difficult task.…”

Section: Modeling and Computational Proceduresmentioning

confidence: 99%

Modeling and computation of double drift region transit time diode performance based on graphene‐SiC

Ghivela

Sengupta

2019

Int J Numerical Modelling

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We have proposed a double drift region (DDR) Impact Avalanche Transit Time (IMPATT) diode based on graphene-silicon carbide (SiC) substrate. Due to attractive and extensive electronics properties of graphene materials, for the first time, we have modeled and designed the diode on epitaxially grown graphene deposited on the silicon face of SiC. The direct current (DC) characteristics and small signal performance of the modeled diode are computed with the help of COMSOL Multi Physics and MATLAB software tools. Performance is evaluated at the frequency regime of Ka band. The proposed diode is validated through the boundary conditions. Profiles of electric field distribution, density of mobile space charge, conversion efficiency, power density, susceptance-conductance, and voltage drops at different zones are obtained. The graphene-SiC-based DDR IMPATT is giving better DC and small signal performances.

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Quantum drift-diffusion model for IMPATT devices

Cited by 19 publications

References 21 publications

1.0–10.0 THz Radiation from Graphene Nanoribbon Based Avalanche Transit Time Sources

1.0–10.0 THz Radiation from Graphene Nanoribbon Based Avalanche Transit Time Sources

Bias Current Modulation of DC and RF Properties of Al_mGa_1‐m∼GaN Heterojunction IMPATT at Sub‐Millimeter Wave Frequency

Modeling and computation of double drift region transit time diode performance based on graphene‐SiC

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Quantum drift-diffusion model for IMPATT devices

Cited by 19 publications

References 21 publications

1.0–10.0 THz Radiation from Graphene Nanoribbon Based Avalanche Transit Time Sources

1.0–10.0 THz Radiation from Graphene Nanoribbon Based Avalanche Transit Time Sources

Bias Current Modulation of DC and RF Properties of AlmGa1‐m∼GaN Heterojunction IMPATT at Sub‐Millimeter Wave Frequency

Modeling and computation of double drift region transit time diode performance based on graphene‐SiC

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Bias Current Modulation of DC and RF Properties of Al_mGa_1‐m∼GaN Heterojunction IMPATT at Sub‐Millimeter Wave Frequency