Quantum effect in oxide thickness determination from capacitance measurement

Yang, K.J.; King, Ya‐Chin; Hu, Chenming

doi:10.1109/vlsit.1999.799348

Cited by 76 publications

(35 citation statements)

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“…Fig. 1 shows the -characteristics of n-FETs and p-FETs and the best fitting quantum -simulations [8]. The measured -curves agree very well with the theoretical results.…”

Section: Device Fabricationsupporting

confidence: 69%

“…A fixed nitrogen implant dose of 5 10 cm was used on all samples. Work function of the gate electrode was extracted using a quantum -simulator and the -method [6], [8], which excludes the effect of fixed charge. The theoretical projected ranges, , as simulated by SRIM (IBM), are summarized in Table I along with the respective experimental MOS work function shift obtained (as compared to the unimplanted samples).…”

Section: Device Fabricationmentioning

confidence: 99%

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An adjustable work function technology using Mo gate for CMOS devices

Lin

Lü

Ranade

et al. 2002

IEEE Electron Device Lett.

174

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Nitrogen implantation of Mo gate was used to fabricate MOS capacitors and CMOS transistors. Initial studies demonstrate that the work function of Mo is sensitive to nitrogen implantation energy. Mo with (110) orientation exhibits a high work function, making it suitable for bulk p-MOSFET gate electrodes. Nitrogen implantation can be used to lower the Mo work function, making it suitable for n-MOSFET gate electrodes. A gate work function reduction of 0.42 eV was achieved for the n-FETs on CMOS wafers. With further optimization, this single metal gate technology may potentially replace conventional poly-Si gate technology for CMOS and can also be used for multipletechnologies.

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“…Fig. 1 shows the -characteristics of n-FETs and p-FETs and the best fitting quantum -simulations [8]. The measured -curves agree very well with the theoretical results.…”

Section: Device Fabricationsupporting

confidence: 69%

Section: Device Fabricationmentioning

confidence: 99%

An adjustable work function technology using Mo gate for CMOS devices

Lin

Lü

Ranade

et al. 2002

IEEE Electron Device Lett.

174

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“…All the measurements were done at gate area of 2.5 ϫ 10 −5 cm 2 . The flatband voltage and the EOT have been calculated using the Berkely program 15 considering the quantum mechanical correction. Figure 1 shows the C-V characteristics at 100 kHz of different samples at different annealing temperature, and 10 atm pressure.…”

mentioning

confidence: 99%

Electrical Characteristics of LaAlO[sub 3] Gate Dielectrics Prepared by High-Pressure Hydrogen Post-Deposition Annealing

Hasan

Rahman

et al. 2006

Electrochem. Solid-State Lett.

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To improve electrical characteristics of high-k gate dielectrics, post-deposition annealing ͑PDA͒ was performed in high-pressure ͑10 atm͒ pure hydrogen ambient. High-pressure PDA samples show excellent electrical characteristics such as low fixed charge density, and reduced interface state density confirmed by capacitance-voltage analysis and conductance technique, respectively. They also showed no frequency dependency and a hysteresis of 2.9 mV. The leakage current decreases remarkably from 0.23 to 2.44 ϫ 10 −7 Ampere/cm 2 at the gate voltage of 1 V below V FB . The excellent electrical characteristics of high-pressure hydrogen annealed sample can be explained by enhanced hydrogen passivation of defects in high-k dielectric. According to the ITRS roadmap, beyond the 32 nm technology node high permittivity oxides mainly Hf-based oxides will replace the current Si-based oxides.1 Among other oxides, the lanthanum series oxides have attracted most attention.2,3 Ternary oxide materials like LaAlO 3 ͑LAO͒ also has emerged as a potential candidate for its better thermal stability. 4 It also has high band offset and dielectric constant.5 Recently, effective oxide thickness ͑EOT͒ of 3 Å for LAO has been reported which establishes LAO as the future gate dielectric material. 6The as grown high-k oxide contains lot of oxygen vacancy related defect sites which cause a negative shift of the C-V curve.7 In addition, the interface of these oxides with silicon has lattice mismatch which is known as interface trap charge. These charges cause different phenomena like hysteresis, leakage current, frequency dependency, and flatband instability, which prohibits its use as in the actual devices. A very common and simple technique to determine these oxide charges are from the capacitance-voltage ͑C-V͒ measurement. Both of these charges cause the flatband voltage of the C-V curve to shift either in the positive or negative direction from the ideal C-V curve according towhere V FB is the flatband voltage of the C-V curve, Q it is the interface trap charge, Q f is the interface fixed charge, W ms is the difference of work function between metal and silicon, and C ox is the accumulation capacitance. The platinum gate has an accepted work function of 5.65 eV. 9 The effective workfunction changes due to Fermi level pinning but normally platinum metal is considered to be more or less inert in nature. That is why platinum gate is widely used as a reference gate metal for metal gate research.10 The p-type silicon with doping concentration of ϳ1 ϫ 10 15 cm −2 has a work function of 4.895 eV, which gives a work function difference, W ms , of 0.755 eV. If there is no oxide charges present in the film then the ideal V FB will be equal to W ms .These high-k oxides also have higher leakage current in the asdeposited condition and to reduce the current density postdeposition annealing step is normally done in oxygen and nitrogen environment at different temperature ranging from 450 to 1000°C. 11These annealing steps not only reduce the leakage curren...

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“…The peak area between the carriers and the interface Al 2 O 3 /Si is depleted of carriers. This area is called " darkspace", and can be modeled as an extra contribution to the effective gate oxide thickness [13,14]. The equations of the average distance of the carriers from the Al 2 O 3 /Si interface (x = 0) for the semiclassical and quantum mechanical case, is given, respectively, by…”

Section: Resultsmentioning

confidence: 99%

“…Each of these subband energies, primed or unprimed, is described at the interface Al 2 O 3 /Si and more precisely primed subbands E 21 unprimed subbands E 14 unprimed subbands E 13 unprimed subbands E 12 unprimed subbands E 11 Fermi level in the triangular quantum wells as exposed in Fig. 7.…”

Section: Resultsmentioning

confidence: 99%

Charge density at the Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/Si interface in Metal-Insulator-Semiconductor devices: semiclassical and quantum mechanical descriptions

Hlali

Hizem

Kalboussi

2017

Физика И Техника Полупроводников

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In this paper, a quantum correction computation of the inversion layer of charge density was investigated. This study is carried out for a one-dimensional Metal-Insulator-Semiconductor (MIS) structure with (100) oriented P-type silicon as substrate. The purpose of this paper is to point out the differences between the semiclassical and quantum-mechanical charge description at the interface Al 2 O 3 /Si, and to identify some electronic properties of our MIS device using different thickness of the high-k oxide and diverse temperature with different carrier statitics (Fermi-Dirak statitics and Boltzmann statitics). In particular, the calculations of capacitance voltage (C−V ), sheet electron density, a relative position of subband energies and their wave functions are performed to examine qualitatively and quantitatively the electron states and charging mechanisms in our device.

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Quantum effect in oxide thickness determination from capacitance measurement

Cited by 76 publications

References 0 publications

An adjustable work function technology using Mo gate for CMOS devices

An adjustable work function technology using Mo gate for CMOS devices

Electrical Characteristics of LaAlO[sub 3] Gate Dielectrics Prepared by High-Pressure Hydrogen Post-Deposition Annealing

Charge density at the Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/Si interface in Metal-Insulator-Semiconductor devices: semiclassical and quantum mechanical descriptions

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