Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect

Djurić, Z.; Livada, Branko; Jović, V.; Smiljanić, M.; Matić, Milan; Lazić, Žarko

doi:10.1016/0020-0891(89)90002-x

Cited by 12 publications

(2 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Our modelling of the device responsivity spectrum originates from [26]. In this approach, for the doped regions, the excess electron and hole concentrations were found from the continuity equations with the carrier generation term in the form Φα exp (−α d) , where Φ is the incident photon flux and α is the absorption coefficient.…”

Section: Modeling Of the Device Responsivitymentioning

confidence: 99%

High power density soft x-ray GaAs photodiodes with tailored spectral response

Donetski

Kucharczyk

Liu

et al. 2022

Semicond. Sci. Technol.

View full text Add to dashboard Cite

GaAs photodiode arrays have been designed for non-destructive monitoring of X-ray beam position in soft coherent beamline front ends in synchrotron light sources. A shallow p-on-n junction was employed to reduce the device photocurrent density to optimize the operation with beam power densities up to 20 W/mm2, mainly coming from hard X-rays. With this approach, the photocurrent is primarily defined by the excess carriers generated by low-energy X-ray photons absorbed near the detector surface. The p-n junction structures were grown by Molecular Beam Epitaxy and processed into 64-element linear photodiode arrays. The devices were characterized first in the visible range with a high-power Ar-ion laser and then tested in the soft and hard X-ray regions up to 10 keV at two beamlines of the National Synchrotron Light Source-II. The responsivity was measured to be 0.16 A/W at 0.7 keV and 0.05 A/W at 6 keV in agreement with modeling. At higher X-ray energies the measured responsivity was lower than predicted in the framework of the carrier diffusion model; a possible explanation is discussed.

show abstract

Section: Modeling Of the Device Responsivitymentioning

confidence: 99%

High power density soft x-ray GaAs photodiodes with tailored spectral response

Donetski

Kucharczyk

Liu

et al. 2022

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…As a consequence, an optical bandgap must be considered as explained by Burstein and Moss [50,51]. The transparency resulting from the so-called Moss-Burstein effect, experimentally observed in [52], can be accounted for by using the model for the absorption coefficient introduced in [66] and subsequently applied in [67] and more particularly in [68] for simulating InSb devices. Eqs.…”

Section: Fundamental Bandgap E G [T]mentioning

confidence: 99%

Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaics

Vaillon¹,

Pérez²,

Lucchesi³

et al. 2019

Opt. Express

View full text Add to dashboard Cite

Simulations of near-field thermophotovoltaic devices predict promising performance, but experimental observations remain challenging. Having the lowest bandgap among III-V semiconductors, indium antimonide (InSb) is an attractive choice for the photovoltaic cell, provided it is cooled to a low temperature, typically around 77 K. Here, by taking into account fabrication and operating constraints, radiation transfer and low-injection charge transport simulations are made to find the optimum architecture for the photovoltaic cell. Appropriate optical and electrical properties of indium antimonide are used. In particular, impact of the Moss-Burstein effects on the interband absorption coefficient of n-type degenerate layers, and of parasitic sub-bandgap absorption by the free carriers and phonons are accounted for. Micron-sized cells are required to minimize the huge issue of the lateral series resistance losses. The proposed methodology is presumably relevant for making realistic designs of near-field thermophotovoltaic devices based on low-bandgap III-V semiconductors.

show abstract