Quantum efficiency and spatial noise tradeoffs for III–V focal plane arrays

Haran, Terence L.; James, J. Christopher; Lane, Sarah E.; Cincotta, Tomas E.

doi:10.1016/j.infrared.2019.01.001

Cited by 7 publications

(11 citation statements)

References 56 publications

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“…The survey includes 68 unique references from a variety of different institutions and organizations and includes FPAs with variations in substrate removal, anti-reflection coatings, and operating temperature. The T2SLS values reported here only include results published since the authors' last survey [5], and the QE and dark current charts focus on results from test arrays and production FPAs rather than single photodiodes, which were included in the previous publications.…”

Section: Recently Reported Infrared Detector Performancementioning

confidence: 99%

“…In previous papers [4,5], the authors presented the results of analyses to evaluate system-level performance (quantified by the range at which a human observer can detect or identify a relevant target) to determine appropriate goals for detector design parameters such as QE, dark current density, quantum well capacity, downstream readout noise, well fill, image frame rate, frame averaging, and residual fixed pattern noise (RFPN). Although optimum *Corresponding author at: chris.james@gtri.gatech.edu design goals for these parameters are application specific, the authors were able to make several general observations based on the results of the analyses.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, it was found that low RFPN is the primary detector characteristic for determining system performance assuming a finite well size. Therefore, prioritization of uniformity improvements may offer an FPA manufacturer an easier path to increase system performance [5].…”

Section: Introductionmentioning

confidence: 99%

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Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

2024

Opto-Electronics Review

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Infrared detector technologies engineered from III-V semiconductors such as strained-layer superlattice, quantum well infrared photodetectors, and quantum dot infrared photodetectors provide additional flexibility to engineer bandgap or spectral response cut-offs compared to the historical high-performance detector technology of mercury/cadmium/telluride. The choice of detector cut-off depends upon the sensing application for which the system engineer is attempting to maximize performance within an expected ensemble of operational scenarios that define objects or targets to be detected against specific environmental backgrounds and atmospheric conditions. Sensor performance is typically characterised via one or more metrics that can be modelled or measured experimentally. In this paper, the authors will explore the impact of detector cut-off wavelength with respect to different performance metrics such as noise equivalent temperature difference and expected target detection or identification ranges using analytical models developed for several representative sensing applications encompassing a variety of terrestrial atmospheric conditions in the mid-wave and long-wave infrared wavelength bands. The authors will also report on their review of recently published literature concerning the relationships between cut-off wavelength and the other detector performance characteristics such as quantum efficiency or dark current for a variety of detector technologies.

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Section: Recently Reported Infrared Detector Performancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

2024

Opto-Electronics Review

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“…It is clearly shown that the performance of T2SL can compete favorably with these technologies, specifically with the MCT, with the QE of T2SL is in the range of 30–80%. [ 250 ] Although the demonstrated dark current density of SL detectors is reducing and approaching that of MCT detectors, it has still not reached the MCT's “Rule 07” performance level [ 6,250 ] as shown in Figure 13b. Theoretically, it is believed that this SL has the potential to considerably exceed the performance of MCT.…”

Section: Recent Advances In Ir Detection Technologiesmentioning

confidence: 99%

“…Figure 13. Schematic plots show a) quantum efficiency and b) dark current density performance of current state-of-the-art technologies including XBn, MCT, QWIP, and T2SL single-pixels and FPAs in the MWIR spectral band (3-6 μm).Reproduced with permission [250]. Copyright 2019, Elsevier.…”

mentioning

confidence: 99%

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

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Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.

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Mechanism of dark current dependence on reverse voltage in mid-wavelength infrared HgCdTe mesa PIN avalanche diode

Chen

et al. 2021

Opt Quant Electron

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Quantum efficiency and spatial noise tradeoffs for III–V focal plane arrays

Cited by 7 publications

References 56 publications

Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Mechanism of dark current dependence on reverse voltage in mid-wavelength infrared HgCdTe mesa PIN avalanche diode

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