Quantum efficiency stability of silicon photodiodes

Korde, R.; Geist, Jon

doi:10.1364/ao.26.005284

Cited by 145 publications

(63 citation statements)

References 23 publications

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“…As noted above (see Fig. 7), c-Si does not show significant impact ionization for photon energies within the range of the solar spectrum [46,49]. Device modeling indicates that a hypothetical c-Si solar cell, operating with efficient impact ionization such that every absorbed photon at or above 2E g produced two electron-hole pairs, would reduce the power loss to heat from 47% to 39% while increasing the electrical power from 33% to 41%.…”

Section: Carrier-carrier and Carrier-lattice Interactions In Bulk Semmentioning

confidence: 76%

Multiple exciton generation in semiconductor nanocrystals: Toward efficient solar energy conversion

Beard¹,

Ellingson²

2008

Laser & Photonics Reviews

142

131

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Within the range of photon energies illuminating the Earth's surface, absorption of a photon by a conventional photovoltaic semiconductor device results in the production of a single electron-hole pair; energy of a photon in excess of the semiconductor's bandgap is efficiently converted to heat through electron and hole interactions with the crystal lattice. Recently, colloidal semiconductor nanocrystals and nanocrystal films have been shown to exhibit efficient multiple electron-hole pair generation from a single photon with energy greater than twice the effective band gap. This multiple carrier pair process, referred to as multiple exciton generation (MEG), represents one route to reducing the thermal loss in semiconductor solar cells and may lead to the development of low cost, high efficiency solar energy devices. We review the current experimental and theoretical understanding of MEG, and provide views to the nearterm future for both fundamental research and the development of working devices which exploit MEG. MEG E g E hνAbsorption of a single photon with energy in excess of two times the band gap, Eg, produces multiple excitons at the band edge. TEM picture of typical PbSe nanocrystals.

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Section: Carrier-carrier and Carrier-lattice Interactions In Bulk Semmentioning

confidence: 76%

Multiple exciton generation in semiconductor nanocrystals: Toward efficient solar energy conversion

Beard¹,

Ellingson²

2008

Laser & Photonics Reviews

142

131

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“…The detectors for the SXP are silicon XUV photodiodes that are available commercially and discussed in detail by Korde and Geist [1987], Korde et al [1988], and Canfield et al [1994]. Their response at short wavelengths is near the theoretical response for silicon.…”

Section: Instrumentationmentioning

confidence: 99%

Measurements of the solar soft X‐ray irradiance by the Student Nitric Oxide Explorer: First analysis and underflight calibrations

Bailey¹,

Woods²,

Barth³

et al. 2000

J. Geophys. Res.

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Abstract. Beginning on March 11, 1998, the Student Nitric Oxide Explorer (SNOE) satellite has made daily observations of the solar soft X-ray irradiance. These measurements are carried out by a multichannel photometer system. The spectral range between 2 and 20 nm is covered by three channels with bandpasses of 2-7 nm, 6 -19 nm, and 17 -20 nm respectively. Absolute sensitivities were measured prefiight using the Synchrotron Ultraviolet Radiation

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“…After the standard p+ channel stop and n+ guard ring diffusion, phosphorous diffusion was carried out to achieve zero surface recombination without a diffused dead region [3]. The passivating silicon dioxide coating was thinned down to 80 A after completion of the phosphorous diffusion.…”

Section: -450gmentioning

confidence: 99%

Soft X-Ray silicon photodiodes with 100% quantum efficiency

Wenzel

Pappas

et al. 1994

IEEE Trans. Nucl. Sci.

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Silicon p-n junction photodiodes (AXUV diodes) with nearly 100% quantum efficiency (QE) for soft x-ray photons (up to about 6 keV) were recently developed. This implies no recombination of photo-generated charge carriers in the front doped region and at the Si-SiO 2 interface. This work reports fabrication and testing of the AXUV diodes with 100% quantum efficiency for photons with energy up to 10 keV. Response of the new diodes was measured using electron-beam x-ray generators with copper and molybdenum anodes that, when filtered properly, provide K x rays at 8 and 17.5 keV respectively. AXUV photodiodes fabricated on high-resistivity silicon were found to exhibit gain in their response to these x rays. The x-ray signal was observed to increase, by up to a factor of 25, when the bias voltage was raised above the level required for full depletion of the silicon. A similar gain was found in the response to oz particles when the diodes fabricated on high-resistivity silicon were operated in pulse mode. A diode fabricated from low resistivity silicon, with low leakage current, did not exhibit any gain in its x-ray response.

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Quantum efficiency stability of silicon photodiodes

Cited by 145 publications

References 23 publications

Multiple exciton generation in semiconductor nanocrystals: Toward efficient solar energy conversion

Multiple exciton generation in semiconductor nanocrystals: Toward efficient solar energy conversion

Measurements of the solar soft X‐ray irradiance by the Student Nitric Oxide Explorer: First analysis and underflight calibrations

Soft X-Ray silicon photodiodes with 100% quantum efficiency

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