Quantum Hall criticality in an amorphous Chern insulator

Bera, Soumya; Dieplinger, Johannes; Nayak, Naba P.

doi:10.1103/physrevb.109.174213

Phys. Rev. B

2024

DOI: 10.1103/physrevb.109.174213

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Quantum Hall criticality in an amorphous Chern insulator

Soumya Bera,

Johannes Dieplinger,

Naba P. Nayak

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2024

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Integer quantum Hall transition: An S -matrix approach to random networks

Topchyan,

Gruzberg,

Nuding

et al. 2024

Phys. Rev. B

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In this paper we propose an S-matrix approach to numerical simulations of network models and apply it to random networks that we proposed in a previous work [I. A. Gruzberg, A. Klümper, W. Nuding, and A. Sedrakyan, ]. Random networks are modifications of the Chalker-Coddington (CC) model for the integer quantum Hall transition that more faithfully captures the physics of electrons moving in a strong magnetic field and a smooth disorder potential. This method has considerable advantages compared to the transfer matrix approach and gives the value ν≈2.4 for the critical exponent of the localization length in a random network. This finding confirms our previous result and is surprisingly close to the experimental value νexpt≈2.38 observed at the integer quantum Hall transition but substantially different from the CC value νCC≈2.6. Published by the American Physical Society 2024

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Integer quantum Hall transition: An S -matrix approach to random networks

Topchyan,

Gruzberg,

Nuding

et al. 2024

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

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Quantum Hall criticality in an amorphous Chern insulator

Cited by 1 publication

References 86 publications

Integer quantum Hall transition: An S -matrix approach to random networks

Integer quantum Hall transition: An S -matrix approach to random networks

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