Quantum Hall Transition in Real Space: From Localized to Extended States

Hashimoto, Katsufumi; Sohrmann, Christoph; Wiebe, Jens; Inaoka, Takeshi; Meier, F.; Hirayama, Y.; Römer, Rudolf A.; Wiesendanger, R.; Morgenstern, Markus

doi:10.1103/physrevlett.101.256802

Cited by 155 publications

(157 citation statements)

References 28 publications

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“…We note that our theoretical results are consistent with available data on scanning tunneling microscopy in disordered interacting systems, in particular, for a strongly disordered 3D system [68], for various 2D semiconductor systems and graphene [69][70][71][72], for a magnetic semiconductor Ga 1−x Mn x As near metal-insulator transition [9], for metallic and insulating phases near superconductorinsulator transition in TiN, InO, and NbN films [73][74][75][76][77][78].…”

Section: Pacssupporting

confidence: 88%

Mesoscopic fluctuations of the local density of states in interacting electron systems

2017

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We review our recent theoretical results for mesoscopic fluctuations of the local density of states in the presence of electron-electron interaction. We focus on the two specific cases: (i) a vicinity of interacting critical point corresponding to Anderson-Mott transition, and (ii) a vicinity of non-interacting critical point in the presence of a weak electron-electron attraction. In both cases strong mesoscopic fluctuations of the local density of states exist. PACS:Introduction. -Since the seminal paper by P.W. Anderson [1] a study of the localization-delocalization quantum phase transition in noninteracting disordered systems has turned into a vast field of research (see Refs. [2, 3] for a review). As any other quantum phase transitions, Anderson transition is characterized by a set of critical exponents which controls the scaling of a divergent correlation length and different physical observables. However, contrary to ordinary quantum phase transitions, for an Anderson transition there is the additional set of critical exponents ∆

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Section: Pacssupporting

confidence: 88%

Mesoscopic fluctuations of the local density of states in interacting electron systems

2017

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“…This intriguing prediction exemplifies how usually weak SOI can generate a qualitatively new and physically robust effect as a measurable signature of the many-body response of a 2DES. Because this effect arises at the interface of a semiconductor, we believe that it should be directly observable through tunneling microscopy imaging 29,30 of the density distribution around an impurity. …”

Section: ͑9͒mentioning

confidence: 99%

Beating of Friedel oscillations induced by spin-orbit interaction

et al. 2010

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By exploiting our recently derived exact formula for the Lindhard polarization function in the presence of Bychkov-Rashba ͑BR͒ and Dresselhaus ͑D͒ spin-orbit interaction ͑SOI͒, we show that the interplay of different SOI mechanisms induces highly anisotropic modifications of the static dielectric function. We find that under certain circumstances the polarization function exhibits doubly singular behavior. It leads to an intriguing phenomenon, beating of Friedel oscillations, which can be controlled by external fields. This effect is a general feature of systems with BR+ D SOI and should be observed in structures with a sufficiently strong SOI. DOI: 10.1103/PhysRevB.81.205314 PACS number͑s͒: 71.70.Ej, 72.10.Ϫd, 72.20.Ϫi, 72.25.Ϫb Spin-orbit interaction ͑SOI͒ is of great interest for spintronic applications.1,2 Electron spin is not conserved in the presence of SOI, which allows for purely electric manipulation of spins. 3,4 In conjunction with other carrier scattering mechanisms, SOI leads to intriguing phenomena. One of the major findings is the detection of the spin Hall effect, 5-8 predicted long ago as an outcome of the interplay between SOI and electron-impurity scattering. 9 In turn, electronelectron scattering mediates mutual transformations of spin and charge currents, occurring due to spin Coulomb drag in individual layers 10,11 and due to spin Hall drag 12 in electronic bilayers.In zinc-blende semiconductor nanostructures the interplay between different mechanisms of SOI can itself have crucial consequences. In the presence of both Bychkov-Rashba 13 ͑BR͒ and Dresselhaus 14 ͑D͒ SOI the system possesses C 2v symmetry. The BR coupling strength ␣ depends largely on the asymmetry of structure while the D coupling ␤ varies mainly with the thickness of structure. In the special case when the BR and D SOI strengths are adjusted 15,16 to be equal, even higher SU͑2͒ symmetry occurs in the system 17 and various relaxation 18 and optical 19 properties of the system turned out to be identical to those in the absence of SOI. A remarkable demonstration of such suppression of SOI is the fresh experimental realization 20 of the persistent spin helix.Another distinct manifestation of the interplay of BR and D mechanisms is the SOI-induced anisotropy of the singleparticle spectrum, which modifies spin relaxation and transport properties of the system. [21][22][23] Recently we have studied the influence of that anisotropy on the many-body response of a two-dimensional electron system ͑2DES͒.24 Our calculations have revealed a fine structure of the plasmon spectrum, which produces a striking asymmetric doublet of the structure factor versus momentum orientation. The joint action of BR and D SOI leads to dependence of the interchirality particle-hole continuum on direction. Thus, the plasmon propagation may be free in one direction, but strongly damped in a different direction, where the plasmon dispersion enters the particle-hole continuum. This creates a possibility of directional plasmon filtering, potentially useful ...

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“…The character of the NP subband clarified here is also applicable to the clean n-type InAs(001) surface with an accumulation layer intrinsically formed, 33,36,37 the n-type InSb(110) surface with an accumulation layer induced by Cs adsorption (exceptional accumulation in InSb where a carrier-depletion layer is easily formed), 38 and the p-type InAs(110) surface with a 2DES in its inversion layer produced by Na, Cs or Fe adsorption. 39,40 Furthermore, accumulation layers were observed to form at surfaces of other indium compounds, such as InN (candidate for optoelectronic devices in the blue and UV range) 41 …”

Section: Introductionmentioning

confidence: 88%

Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy

2012

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Adsorption on an n-type InAs surface often induces a gradual formation of a carrieraccumulation layer at the surface. By means of high-resolution photoelectron spectroscopy (PES), Betti et al. made a systematic observation of subbands in the accumulation layer in the formation process. Incorporating a highly nonparabolic (NP) dispersion of the conduction band into the local-density-functional (LDF) formalism, we examine the subband structure in the accumulation-layer formation process. Combining the LDF calculation with the PES experiment, we make an accurate evaluation of the accumulated-carrier density, the subband-edge energies, and the subband energy dispersion at each formation stage. Our theoretical calculation can reproduce the three observed subbands quantitatively. The subband dispersion, which deviates downward from that of the projected bulk conduction band with an increase in wave number, becomes significantly weaker in the formation process.

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Quantum Hall Transition in Real Space: From Localized to Extended States

Abstract: Using scanning tunneling spectroscopy in an ultrahigh vacuum at low temperature (T=0.3 K) and high magnetic fields (B Show more

Cited by 155 publications

References 28 publications

Mesoscopic fluctuations of the local density of states in interacting electron systems

Mesoscopic fluctuations of the local density of states in interacting electron systems

Beating of Friedel oscillations induced by spin-orbit interaction

Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy

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