Quantum interference and Klein tunnelling in graphene heterojunctions

Young, Andrea; Kim, Philip

doi:10.1038/nphys1198

Cited by 1,140 publications

(1,132 citation statements)

References 30 publications

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“…3b) confirms the predominant h/e AB and absent h/2e AAS oscillations, implying quasi-ballistic, phase-coherent transport along the device. Quasi-ballistic behaviour is further confirmed by the observation of Fabry-Perot oscillations [22][23][24][25] in similar TI nanowire devices (see Supplementary Fig. 1 and Supplementary Note 1).…”

Section: Aharonov-bohm Oscillations As a Function Of Fermi Energysupporting

confidence: 57%

Aharonov–Bohm oscillations in a quasi-ballistic three-dimensional topological insulator nanowire

et al. 2015

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Aharonov-Bohm oscillations effectively demonstrate coherent, ballistic transport in mesoscopic rings and tubes. In three-dimensional topological insulator nanowires, they can be used to not only characterize surface states but also to test predictions of unique topological behaviour. Here we report measurements of Aharonov-Bohm oscillations in (Bi 1.33 Sb 0.67 )Se 3 that demonstrate salient features of topological nanowires. By fabricating quasi-ballistic three-dimensional topological insulator nanowire devices that are gate-tunable through the Dirac point, we are able to observe alternations of conductance maxima and minima with gate voltage. Near the Dirac point, we observe conductance minima for zero magnetic flux through the nanowire and corresponding maxima (having magnitudes of almost a conductance quantum) at magnetic flux equal to half a flux quantum; this is consistent with the presence of a low-energy topological mode. The observation of this mode is a necessary step towards utilizing topological properties at the nanoscale in post-CMOS applications.

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Section: Aharonov-bohm Oscillations As a Function Of Fermi Energysupporting

confidence: 57%

Aharonov–Bohm oscillations in a quasi-ballistic three-dimensional topological insulator nanowire

et al. 2015

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“…The presence of a magnetic field does not destroy the Klein tunneling but just shifts the magic angles. 8 It can be assumed that tunneling from one electron puddle to the other electron puddle always remains possible even for carriers incident to an oblique angle (the same holds for hole transport). Thus, even under a nonuniform distribution of electron-hole puddles, we can apply our two-carrier model to graphene.…”

Section: Resultsmentioning

confidence: 99%

Coexistence of electron and hole transport in graphene

et al. 2011

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Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum. When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two-component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level, which implies a quantum Hall metal state at ν = 0 made up by both electrons and holes.

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“…1a and 1b. In contrast to earlier implementation of dual gated devices, which induce Fabry-Perot interference only inside a potential barrier [13,29,30], the dual-gated BLG device described here allows a phase coherent transport regime over the full channel length, necessary condition to realize electronic cloaking phenomena. This approach allows us to prevent loss of phase information when charge carriers traverse the BLG channel.…”

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confidence: 96%

“…One prime example is the Klein tunneling, perfect transmission through the barrier regardless of its width and energy height [5,[9][10][11][12][13][14][15][16][17][18][19]. Different from monolayer graphene, charge carriers in bilayer graphene (BLG) are massive Dirac fermions also with a chiral nature, but a finite density of states at zero energy [5,9,20,21].…”

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confidence: 99%

Evidence of electronic cloaking from chiral electron transport in bilayer graphene nanostructures

Lee

et al. 2016

Phys. Rev. B

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The coupling of charge carrier motion and pseudospin via chirality for massless Dirac fermions in monolayer graphene has generated dramatic consequences such as the unusual quantum Hall effect and Klein tunneling. In bilayer graphene, charge carriers are massive Dirac fermions with a finite density of states at zero energy. Because of their non-relativistic nature, massive Dirac fermions can provide an even better testbed to clarify the importance of chirality in transport measurement than massless Dirac fermions in monolayer graphene. Here we report electronic

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Quantum interference and Klein tunnelling in graphene heterojunctions

Cited by 1,140 publications

References 30 publications

Aharonov–Bohm oscillations in a quasi-ballistic three-dimensional topological insulator nanowire

Aharonov–Bohm oscillations in a quasi-ballistic three-dimensional topological insulator nanowire

Coexistence of electron and hole transport in graphene

Evidence of electronic cloaking from chiral electron transport in bilayer graphene nanostructures

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