Analyzing the photocurrent spectra and the I -V characteristics of weakly coupled GaAs/AlGaAs multiquantum well structures, different transport regimes are distinguished. At low temperatures ͑below ϳ50 K͒, due to the electron coherence over a few periods of the superlattice, electron transport is dominated by sequential resonant tunneling. At higher temperatures, evidences for the increased contribution of nonresonant transport processes, and the subsequent modification in the electric field distribution in the device, are presented. © 1997 American Institute of Physics.
͓S0021-8979͑97͒04504-0͔Electron transport in multiple quantum well ͑MQW͒ superlattices is dominated by sequential resonant tunneling when resonant coupling between adjacent wells exists. This is the origin of a negative differential resistance mechanism whose attendant instabilities give rise to electric field domain ͑EFD͒ formation in the MQW region.1-3 Esaki and Chang 1 first studied this effect in a strongly coupled MQW structure. They observed discontinuities in the I -V characteristics with an average separation equal to the subband spacings ͑in volts͒ in each quantum well ͑QW͒. 1,3 This was explained through the formation of high and low EFDs in the structure and the stepwise increase in the high field domain ͑HFD͒ size with increasing external bias.Even though it is the electron coherence over distances of at least the order of neighboring well separation which is the origin of resonant tunneling, it is difficult to directly relate the dc transport experiments to the electron coherence length. Recently, the sensitivity of the photocurrent spectra in single-bound state MQW structures to well spacings and to the electric field was used to investigate electron coherence effects and the electric field distribution in the device. 4 In this letter, we report on the effect of the temperature on current transport in MQW devices, showing how the transport changes from being dominated by sequential resonant tunneling at low temperatures to domination by nonresonant processes at higher temperatures. Evidences for these nonresonant transport mechanisms which lead to strong changes in the electric field distribution in the device are also presented.The sample used for this study was grown by molecular beam epitaxy on a ͑100͒ semi-insulating GaAs substrate. It consists of 50 periods of 4 nm GaAs wells, uniformly doped with Si to nϭ2ϫ10 18 cm
Ϫ3, separated by 20 nm Al 0.22 Ga 0.78 As barriers. As discussed in Ref. 4, the sample was designed to have one bound state in the well, and a first resonant state highly in the continuum, about 24 meV above the barrier. Devices with 200 m diameter were fabricated by standard photolithography and wet chemical etching techniques. The peak at ϳ155 meV in the photocurrent spectrum at V bias ϭϪ2 V and Tϭ10 K, as shown in Fig. 1͑a͒, corresponds to the transition from the ground state to the first continuum resonant state of an isolated QW. The auxiliary peak at ϳ187 meV is due to electron interference effects over a few...