Quantum Materials with Atomic Precision: Artificial Atoms in Solids: Ab Initio Design, Control, and Integration of Single Photon Emitters in Artificial Quantum Materials

Narang, Prineha; Ciccarino, Christopher J.; Englund, Dirk

doi:10.1002/adfm.201904557

Cited by 19 publications

(16 citation statements)

References 88 publications

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“…Moreover, tailoring correlation effects in nanostructure via a precise control of both the positioning and the composition of point defects would open the way to quantum metamaterials. This challenge benefits of the interplay between advanced experimental techniques and theoretical models able to predict the properties of interest [22]. Based on ab-initio calculations [3], some of us have recently demonstrated that GeV complexes in silicon are stable defects, characterized by excited states deep in the bandgap, at about −0.5 eV and −0.35 eV from the conduction band, consistent with experiment [23].…”

Section: Introductionsupporting

confidence: 52%

Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms

Achilli¹,

Le²,

Fratesi³

et al. 2021

Preprint

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Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, here we report on the functionalization of silicon vacancies by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV ) complexes. We investigate the quantum transport through an array of GeV complexes in a silicon-based transistor. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab-initio results we find anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states, compared to conventional dopants. We identify such states, forming the upper Hubbard band, as responsible of the experimental sub-threshold transport across the transistor. The combination of our model with the single-ion implantation method enables future research for the engineering of GeV complexes towards the creation of spatially controllable individual defects in silicon for applications in quantum information technologies.

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Section: Introductionsupporting

confidence: 52%

Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms

Achilli¹,

Le²,

Fratesi³

et al. 2021

Preprint

View full text Add to dashboard Cite

show abstract

“…This challenge benefits of the interplay between advanced experimental techniques and theoretical models able to predict the properties of interest. [22] Based on ab initio calculations, [3] some of us have recently demonstrated that GeV complexes in silicon are stable defects, characterized by excited states deep in the bandgap, at about ≃−0.5 eV and ≃−0.35 eV from the conduction band, consistent with experiment. [23] Such impurity states have large on-site electron-electron repulsion (≃150 meV) due to their highly localized wavefunctions (the decay length of the lowest charged state is ≃0.45 nm).…”

Section: Introductionmentioning

confidence: 56%

“…This challenge benefits of the interplay between advanced experimental techniques and theoretical models able to predict the properties of interest. [ 22 ]…”

Section: Introductionmentioning

confidence: 99%

Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms

Achilli

Fratesi

et al. 2021

Adv Funct Materials

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Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, the functionalization of silicon vacancies is reported on here by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV) complexes. The quantum transport through an array of GeV complexes in a silicon-based transistor is investigated. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab initio results, anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states are obtained, compared to conventional dopants. Such states are identified, forming the upper Hubbard band, as responsible for the experimental sub-threshold transport across the transistor. The combination of the model with the single-ion implantation method enables future research for the engineering of GeV complexes toward the creation of spatially controllable individual defects in silicon for applications in quantum information technology.

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“…Lower-loss magnetic materials, such as V [TCNE] x with magnon damping rate two orders of magnitude lower than YIG's [49], could be used to boost the nanomagnonic cavityenhanced decay rate of the spin emitter and realize the strong-coupling regime where g Γ. By comparison, in spin emitters realized by defects in solidstate materials [50], phonon fields with frequencies also in the microwave range can be used to drive spin transitions [51] with Rabi frequencies on the order of 1-50 MHz [42,43], but these interactions can require careful control and engineering of phononic cavities.…”

Section: Magnon-emitter Couplingmentioning

confidence: 99%

Spin emitters beyond the point dipole approximation in nanomagnonic cavities

Wang¹,

Neuman²,

Narang³

2020

Preprint

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Control over transition rates between spin states of emitters is crucial in a wide variety of fields ranging from quantum information science to the nanochemistry of free radicals. We present an approach to drive a both electric and magnetic dipole-forbidden transition of a spin emitter by placing it in a nanomagnonic cavity, requiring a description of both the spin emitter beyond the point dipole approximation and the vacuum magnetic fields of the nanomagnonic cavity with a large spatial gradient over the volume of the spin emitter. We specifically study the SiV − defect in diamond, whose Zeeman-split ground states comprise a logical qubit for solid-state quantum information processing, coupled to a magnetic nanoparticle serving as a model nanomagnonic cavity capable of concentrating microwave magnetic fields into deeply subwavelength volumes. Through first principles modeling of the SiV − spin orbitals, we calculate the spin transition densities of magnetic dipole-allowed and -forbidden transitions and calculate their coupling rates to various multipolar modes of the nanomagnonic cavity. We envision using such a framework for quantum state transduction and state preparation of spin qubits at GHz frequency scales.

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Quantum Materials with Atomic Precision: Artificial Atoms in Solids: Ab Initio Design, Control, and Integration of Single Photon Emitters in Artificial Quantum Materials

Cited by 19 publications

References 88 publications

Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms

Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms

Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms

Spin emitters beyond the point dipole approximation in nanomagnonic cavities

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