Quantum mechanical calculation of the carrier distribution and the thickness of the inversion layer of a MOS field-effect transistor

Gnädinger, A.P.; Talley, H.E.

doi:10.1016/0038-1101(70)90027-4

Cited by 79 publications

(23 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…These are obtained using the quantized energy levels calculated in the previous sub-section (2.1). The total number of electrons in the channel is obtained using [11]:…”

Section: Carrier Density In the Channelmentioning

confidence: 99%

“…is the density of states for the continuum in the xy-plane and D 2 (E) is the density of states associated with the discrete set of states in the z-direction given as [11]:…”

Section: Carrier Density In the Channelmentioning

confidence: 99%

“…The electron density [11] as a function of z can now be obtained by multiplying the number of electrons in p th energy level by the probability…”

Section: Carrier Density In the Channelmentioning

confidence: 99%

See 2 more Smart Citations

Quantum Modeling of Enhanced Gate Control in a Nanoscale InAlAs/InGaAs DG-HEMT for millimeter-wave Applications

Verma¹,

Gupta²,

Sharma³

et al. 2014

IOSRJEEE

View full text Add to dashboard Cite

“…These are obtained using the quantized energy levels calculated in the previous sub-section (2.1). The total number of electrons in the channel is obtained using [11]:…”

Section: Carrier Density In the Channelmentioning

confidence: 99%

“…is the density of states for the continuum in the xy-plane and D 2 (E) is the density of states associated with the discrete set of states in the z-direction given as [11]:…”

Section: Carrier Density In the Channelmentioning

confidence: 99%

See 1 more Smart Citation

Quantum Modeling of Enhanced Gate Control in a Nanoscale InAlAs/InGaAs DG-HEMT for millimeter-wave Applications

Verma¹,

Gupta²,

Sharma³

et al. 2014

IOSRJEEE

View full text Add to dashboard Cite

“…Then, because in z-direction the electrons are confined in the well, some previous studies suggested considering it as a 2D electron gas (2DEG) system and using the density of states of 2D cases [2][3][4][5][6] g(E) = m t π 2 ,…”

Section: Introductionmentioning

confidence: 99%

“…Some previous researches [2][3][4][5][6] assumed that V(z) has the linear form in semiconductor as V(z) = qξ z, if z > 0; (5a)…”

Section: Introductionmentioning

confidence: 99%

Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers

Lee

Hwu

2013

AIP Advances

View full text Add to dashboard Cite

We derive a statistical physics model of two-dimensional electron gas (2DEG) and propose an accurate approximation method for calculating the quantum-mechanical effects of metal-oxide-semiconductor (MOS) structure in accumulation and strong inversion regions. We use an exponential surface potential approximation in solving the quantization energy levels and derive the function of density of states in 2D to 3D transition region by applying uncertainty principle and Schrödinger equation in k-space. The simulation results show that our approximation method and theory of density of states solve the two major problems of previous researches: the non-negligible error caused by the linear potential approximation and the inconsistency of density of states and carrier distribution in 2D to 3D transition region.

show abstract

Quantum Phenomena in MOS Transistors

Bhattacharyya

2009

Compact Mosfet Models for VLSI Design

View full text Add to dashboard Cite

Quantum mechanical calculation of the carrier distribution and the thickness of the inversion layer of a MOS field-effect transistor

Cited by 79 publications

References 8 publications

Quantum Modeling of Enhanced Gate Control in a Nanoscale InAlAs/InGaAs DG-HEMT for millimeter-wave Applications

Quantum Modeling of Enhanced Gate Control in a Nanoscale InAlAs/InGaAs DG-HEMT for millimeter-wave Applications

Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers

Quantum Phenomena in MOS Transistors

Contact Info

Product

Resources

About