Quantum Mechanical Effects on the Threshold Voltage of Nanoscale Dual Channel Strained Si/Strained Si&lt;SUB&gt;1–&lt;I&gt;y&lt;/I&gt;&lt;/SUB&gt;Ge&lt;SUB&gt;&lt;I&gt;y&lt;/I&gt;&lt;/SUB&gt;/Relaxed &lt;I&gt;Si&lt;/I&gt;&lt;SUB&gt;1–&lt;I&gt;x&lt;/I&gt;&lt;/SUB&gt;Ge&lt;SUB&gt;&lt;I&gt;x&lt;/I&gt;&lt;/SUB&gt;MOSFETs

Kang, EngSiew; Anwar, Sohail; Ismail, Razali

doi:10.1166/jctn.2013.2833

Jnl of Comp & Theo Nano

2013

DOI: 10.1166/jctn.2013.2833

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Quantum Mechanical Effects on the Threshold Voltage of Nanoscale Dual Channel Strained Si/Strained Si1–yGey/Relaxed Si1–xGexMOSFETs

EngSiew Kang¹,

Sohail Anwar²,

Razali Ismail³

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Quantum Mechanical Effects on the Threshold Voltage of Nanoscale Dual Channel Strained Si/Strained Si<SUB>1–<I>y</I></SUB>Ge<SUB><I>y</I></SUB>/Relaxed <I>Si</I><SUB>1–<I>x</I></SUB>Ge<SUB><I>x</I></SUB>MOSFETs

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Strain induced changes in performance of strained-Si/strained-Si1-y Ge y /relaxed-Si1-x Ge x MOSFETs and circuits for digital applications

Strain induced changes in performance of strained-Si/strained-Si1-y Ge y /relaxed-Si1-x Ge x MOSFETs and circuits for digital applications

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