Quantum-mechanical modeling of current-voltage characteristics of Ti-silicided Schottky diodes

Abstract

Based on the interfacial-layer and quantum-mechanical (QM) carrier transport approach, a theoretical model is proposed to predict the anomalous behavior of low-temperature current-voltage (I-V) characteristics of Ti-silicided Schottky diodes. Physical parameters such as barrier height, ideality factor, series resistance, and effective Richardson constant of silicided Schottky diodes are extracted from the forward experimental I-V characteristics. Simulations of both the forward and reverse I-V characteristics have also been performed using extracted parameters. Results are compared with the models, such as, thermionic-emission-diffusion and thermionic-emission with barrier lowering reported in the literature. It is shown that for Ti-silicided Schottky diodes, the use of QM transport model provides a better agreement with the experimental data.

Effect of a Two-Step Recess Process Using Atomic Layer Etching on the Performance of $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As/In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ p-HEMTs

“…The ALET devices show better ideality factor and Schottky barrier height (η = 1.61, Φ B = 0.44 eV) than those (η = 1.92, Φ B = 0.39 eV) of the RIE devices. Here, the Φ B was extracted using the standard current-voltage (I-V ) technique [13]. The higher Φ B and lower η of the ALET devices are attributed to the lower physical damage of the ALET to the underlying In 0.52 Al 0.48 As barrier [11].…”