Quantum Modeling of Nanoscale Symmetric Double-Gate InAlAs/InGaAs/InP HEMT

Verma, Neha; Gupta, Mridula; Gupta, R. S.; Jogi, Jyotika

doi:10.5573/jsts.2013.13.4.342

Cited by 5 publications

(2 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As can be seen from the figure, the analytical electron concentration profile shows a good match with the simulated quantum model and thus validating the proposed model. Also, the peak electron concentration is not at the interface in the quantum model as compared to semiclassical model [10] indicating the merging of the two wells into one. The electron concentration calculated at different applied electric fields is shown in Fig.…”

Section: Resultsmentioning

confidence: 86%

Modeling Quantum Effects In The Channel Of A Nanoscale Symmetric Double Gate InAlAs/InGaAs Double Heterostructure HEMT

Verma¹,

Sharma²,

Jogi³

2014

IOSRJEEE

Self Cite

View full text Add to dashboard Cite

This work models the quantization effects dominating a nano-dimensional symmetric InAlAs/InGaAs double heterostructure DG-HEMT (double-gate HEMT). This is done by solving the one-dimensional (1D) timeindependent Schrodinger equation in the nanoscale channel comprising of symmetric double triangular quantum well (DTQW) separated by a barrier in the DG-HEMT. The electron confinement due to the finite potential profile of a DTQW is analyzed and eigenenergies and the wave functions are calculated. Effect of the external applied fields at the gates controlling the electron confinement in the channel has been studied. The electron concentration is calculated and its distribution between the two quantum wells in InGaAs channel under the influence of different gate bias has been studied. A shift in electron concentration profile is observed from one well to another by the tunneling phenomenon at different applied electric fields indicating coupling between the two quantum wells. The calculated electron concentration profile obtained at equilibrium has been compared with the simulated results obtained from Quantum moments model and also with a semi-classical model.

show abstract

Section: Resultsmentioning

confidence: 86%

Modeling Quantum Effects In The Channel Of A Nanoscale Symmetric Double Gate InAlAs/InGaAs Double Heterostructure HEMT

Verma¹,

Sharma²,

Jogi³

2014

IOSRJEEE

Self Cite

View full text Add to dashboard Cite

show abstract

“…The first term of ( ) is introduced by the Poisson equation. In this equation, the electrostatic potential is related to the space charge distribution in the system [20].…”

Section: The Schrödinger -Poisson Methodsmentioning

confidence: 99%

Analysis of Two-Dimensional Electron Gas Formation in InGaAs-Based HEMTs

Takagi¹,

Kato²,

Taguchi³

2020

Adv. sci. technol. eng. syst. j.

View full text Add to dashboard Cite

In this study, a theoretical simulation was performed using the Schrodinger-Poisson method to elucidate the formation factors for two-dimensional electron gas in InGaAsbased HEMTs. No visible change was observed in the carrier density and the potential shape. The inflection point of the energy level and the agreement of the energy level in each dimension were confirmed for the change in the number of carriers in the channel layer. It was found that the number of electrons at this coincidence point almost coincided with the number of electrons in the IV characteristics measured by the previous research for each gate voltage. The change in carrier state suggested that a 2DEG was formed. In addition, by considering the transport of carriers on the crystal lattice plane as a cause of the inflection point of the energy level, it was suggested that it might be caused due to the occurrence of the degeneracy process at a certain moment. From these results, it was experimentally and theoretically shown that the formation of 2DEG was caused by the carrier degeneration and the state change.

show abstract