Quantum modeling of semiconductor gain materials and vertical‐external‐cavity surface‐emitting laser systems

Abstract

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Derivation of 12- and 14-bandk·pHamiltonians for dilute bismide and bismide-nitride semiconductors

“…The reason for this is that the additional degrees of freedom, specifically, the carrier wave vectors, must be integrated out in order to calculate key physical quantities such as the material gain, which is computationally expensive even in the continuum case. The validity of the continuum approach to calculating quantum well band structure has been thoroughly verified with k · p-based many-body calculations 16 having been employed to accurately describe the gain characteristics of, amongst others, GaInP 17 , InGaN 18 and dilute nitride GaInNAs 19 quantum well lasers. These factors strongly motivate the development of simple and accurate models of the GaBi x As 1−x band structure, which can then be applied to the study of the electronic and optical properties of dilute bismide materials and devices.…”

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states

“…A combination of the k•p and BAC model is a popular choice for modelling the band structure of HMAs 6,7,34 . However, the model applies only to electronic states in vicinity of Γ point and ignores the disorder in IB, e.g.…”

In situ spectroscopy of high-power vertical-external-cavity surface-emitting lasers

“…Since the stimulated emission channel is strongly inhibited, an increased amount of the pump energy is converted to spontaneous emission and heat. The latter leads to a temperature‐dependent spectral shift of the optical modes of about 0.1 nm K −1 . By measuring the wavelength of the PL maximum as function of the heat sink temperature for an excitation intensity below the lasing threshold of 10 W, we are thus able to extract the lattice temperature T from the spectral shift of the PL signal according to: Here, and T 0 are the wavelength of the PL maximum and the heat‐sink temperature, respectively, for a low pump power of 15 W when no significant amount of heat is generated in the active layers.…”