Quantum nanophotonics with group IV defects in diamond

Abstract

Diamond photonics is an ever-growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field shaped by the nitrogen-vacancy (NV) centre with both breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged—group IV colour centres—namely the Si-, Ge-, Sn- and Pb-vacancies. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.

Optical Nanoscale Thermometry: From Fundamental Mechanisms to Emerging Practical Applications

“…Diamond color centers are attractive as, besides displaying photostable fluorescence, they are solid-state systems, which can retain their quantum spin-optical properties at room temperature. The most studied diamond color centers are the nitrogen-vacancy (NV) center [165] and the group IV (SiV, GeV, SnV, and PbV) [166] color centers. These have been successfully employed for quantum-enabled nanoscale sensing [167,168] and are an obvious choice for nanothermometry.…”

Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures

“…For example, the silicon-vacancy (SiV) center in diamond (Figure 1a) is among the most attractive room-temperature single-photon emitters. It is known for polarized emission at a wavelength of about 738 nm from the single negatively charged state, which features a narrow spectrum, large Debye-Waller factor at room and even high temperatures [5][6][7][8]. However, efficient electrical excitation of the SiV centers, as well as other color centers in diamond, is very challenging due to the inability to create a high density of free carriers, which is essential for bright single-photon electroluminescence [9,10] (Figure 1b).…”

Фотолюминесценция Центров Окраски Германий-Вакансия В Полученных Химическим Газофазным Осаждением Алмазных Частицах

“…Для создания однофотонных источников излучения, люминесцентных биомаркеров и термометрии высокого разрешения требуются центры окраски с интенсивной и узкой бесфононной линией (БФЛ) фотолюминесценции (ФЛ), низкой спектральной диффузией БФЛ [6]. Перечисленным требованиям удовлетворяют центры окраски, включающие междоузельный атом IV группы (Si, Ge, Sn и Pb) и две ближайших вакансии в соседних узлах решетки [7]. Наиболее изученным представителем этого семейства центров является центр окраски кремний-вакансия (SiV) в отрицательном зарядовом состоянии.…”

“…В центрах окраски GeV и SiV спин-орбитальное взаимодействие приводит к расщеплению основного ( 2 E g ) и возбужденного ( 2 E u ) состояний на два состояния (тонкая структура центра) [7]. Значение величины расщепления основного состояния центра GeV (150 GHz) выше, чем центра SiV (47 GHz), что обуславливает большее время спиновой когерентности [14].…”