Quantum noise-suppressed operation of TJS and SQW ridge-waveguide laser diodes in photon transistor configurations

Edwards, Paul; Cheung, W.N.; Uddin, A.; Ganeshkumar, G.; Tanaka, Kazunori; Morita, Takenori; Kan, H.; Yamamoto, Yoshihisa

doi:10.1109/commad.2000.1022901

Cited by 2 publications

(5 citation statements)

References 3 publications

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“…As predicted, measurements on the light from light-emitting diodes and laser diodes [26,[28][29][30] indicate a high degree high impedance current noise suppression as predicted, typically more than 20 dB, that is F i r0.01.…”

Section: Photoelectric Measurementsmentioning

confidence: 67%

“…The answer is that the processes of shot noise generation in the base-emitter diode and partition noise generation between base and collector are generic processes that can be described without specific reference to the detailed microphysics. For example, Edwards et al [30,32,33] recently proposed a 'neo-corpuscular' model of both electronic and photonic shot noise suppression based on this approach using the stochastic point process approach described by Teich and Saleh [22]. This accurately models sub-Poissonian circuit shot noise and recombination shot noise in junction diodes, bipolar junction transistors and photon-coupled transistors using the equivalent circuit and rate equation descriptions referred to earlier.…”

Section: Photon-transport/bipolar Junction Transistor Noise Modelsmentioning

confidence: 99%

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Recombination noise in semiconductor junction devices

Edwards

2004

IEE Proc., Circuits Devices Syst.

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The evolution of conceptual models of recombination noise generation in bipolar semiconductor junctions is explored with particular reference to recent developments in nonclassical light generation. This development is traced from the early work pioneered by van der Ziel through to recent work on sub-Poissonian light generation initiated by Yamamoto. This recent work has emphasised the importance of the driving impedance in suppressing recombination noise. It has helped to resolve several longstanding ambiguities and misunderstandings concerning the fundamentals of shot noise generation in laser diodes and light-emitting diodes, as well as in bipolar junction diodes and transistors, and allows a common conceptual approach to shot noise generation and propagation in photonic and electronic devices. Surprisingly, it also lends support to early suggestions by van der Ziel, subsequently regarded as erroneous by Buckingham and Faulkner, that bipolar junction shot noise does in fact originate in the transport of minority carriers across the depletion region of macroscopic junctions, although only in the limit of low injection.

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Section: Photoelectric Measurementsmentioning

confidence: 67%

Section: Photon-transport/bipolar Junction Transistor Noise Modelsmentioning

confidence: 99%

Recombination noise in semiconductor junction devices

Edwards

2004

IEE Proc., Circuits Devices Syst.

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“…It has been proposed that extension of the modulation scheme to four symbols will render the quantum key transmission more robust [9]. The demonstrated system could be extended to a four-symbol alphabet by cascading optical phase modulators after the two optical intensity modulators.…”

Section: Discussionmentioning

confidence: 99%

“…It seems certain that the early implementation of practical quantum key distribution systems with adequate key rates will necessitate keying rates of tens of gigabits per second as we are proposing here. The high switching rates that can be achieved (in excess of 40GHz) appear to be ideal for implementing a variety of quantum key protocols such as the quaternary (BB84) and higher order schemes [9].…”

Section: The Need For Broadband Transmissionmentioning

confidence: 99%

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Ultra-broadband shortwave polarization modulators for high-speed free-space quantum cryptography

et al. 2004

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Free-space quantum key exchanges between ground stations and low earth orbiting satellites will be characterized by high link losses, typically of the order of 30 dB or higher. These losses, together with the need to transmit weak Poissonian laser pulses containing on average substantially less than 0.1 photons per transmitted bit to preserve security, will result in exceedingly low channel efficiencies, typically of the order of 10 -5 . In order to achieve even a relatively modest secure key bit rate of 100 kbps, it will therefore often be necessary to key the transmitter at rates in excess of 10 Gbps. In this paper we outline several different methods of achieving such fast polarization keying including the use of dual drive Mach-Zehnder intensity modulators on lithium niobate in a hybrid fibre-guided optical modulator structures. We then propose a total integrated polarization keying structure in LiNbO 3 . We describe the fabrication and testing of such ultra-broadband polarization keyers suitable for use in high loss, short-wave free-space quantum key distribution systems employing silicon photon counters. We also indicate how these devices may be incorporated into quantum key satellite courier payloads and ground station terminals.

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Quantum noise-suppressed operation of TJS and SQW ridge-waveguide laser diodes in photon transistor configurations

Cited by 2 publications

References 3 publications

Recombination noise in semiconductor junction devices

Recombination noise in semiconductor junction devices

Ultra-broadband shortwave polarization modulators for high-speed free-space quantum cryptography

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