Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor

Strauf, Stefan; Michler, Peter; Klude, M.; Hommel, D.; Bacher, G.; Forchel, A.

doi:10.1103/physrevlett.89.177403

Cited by 101 publications

(69 citation statements)

References 27 publications

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“…In particular, the development of nano-structured systems has opened new possibilities of the generation and application of nonclassical radiation in integrated systems. For example, the correlated emission of single photons can be demonstrated by using quantum dots [6] and bound excitons in semiconductors [7]. Experiments with quantum wells [8] and quantum dots [9,10,11] also show the potential of semiconductors for the generation of entangled photons, which are of interest in quantum information processing.…”

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confidence: 99%

Propagation of nonclassical optical radiation through a semiconductor slab

et al. 2008

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Based on a microscopic derivation of the emission spectra of a bulk semiconductor we arrive at a clear physical interpretation of the noise current operators in macroscopic quantum electrodynamics. This opens the possibility to study medium effects on nonclassical radiation propagating through an absorbing or amplifying semiconductor. As an example, the propagation of an incident squeezed vacuum is analyzed.PACS numbers: 42.50. Nn, 42.50.Ct The progress of experimental techniques has rendered it possible to almost completely measure the quantum statistics of radiation-matter systems, so that correlation functions up to, in principle, arbitrarily high orders can be detected (for a review of the various methods, see, e. g., Ref.[1]). Within the framework of quantum optics, the theoretical study of the interaction of light with complex material systems is typically based on simplifying model systems, effective-Hamiltonian schemes or related semi-phenomenological concepts rather than rigorous microscopic calculations [2].On the other hand, in many-particle quantum theory, including semiconductor theory, much effort has been spent on the development of methods for microscopically describing complex material systems. This includes the description of coherent optical interactions by semiconductor Bloch equations and semiconductor luminescence equations as well as the development of nonequilibrium Green's function methods [3,4]. In principle, these methods lead to infinite hierarchies of correlations, which are usually treated by properly developed methods of truncations and/or decorrelations.It is well known that semiconductors can be used to generate nonclassical radiation [5]. In particular, the development of nano-structured systems has opened new possibilities of the generation and application of nonclassical radiation in integrated systems. For example, the correlated emission of single photons can be demonstrated by using quantum dots [6] and bound excitons in semiconductors [7]. Experiments with quantum wells [8] and quantum dots [9,10,11] also show the potential of semiconductors for the generation of entangled photons, which are of interest in quantum information processing.In order to properly describe the generation and/or propagation of nonclassical radiation through complex material systems such as semiconductor slabs, one has simultaneously to deal with both higher-order radiationfield correlation functions and many-particle quantum statistics of the material system. Within the frame of macroscopic quantum electrodynamics (QED), methods of describing the quantized electromagnetic field in linearly responding (dispersing and absorbing/amplifying) media have been developed, with special emphasis on quantum-noise effects [12,13,14,15,16,17]. Based on given constitutive relations of the material system, field correlation functions of arbitrary order can be calculated in this way. On the other hand, methods of many-particle theory can be used to treat the radiation-matter interaction within the frame of mic...

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Propagation of nonclassical optical radiation through a semiconductor slab

et al. 2008

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“…A different approach has recently emerged by using photons antibunched from individual extrinsic centers in different semiconductor materials. 8,9 In particular, single-photon emission from neutral excitons has been demonstrated from a single nitrogen-vacancy center in diamond, 8,9 nitrogen bound-excitons in ZnSe, 10 Te pairs in ZnSe, 11 F impurity in ZnMgSe/ZnSe quantum-well nanostructures, 12 single N centers in GaAs, 13 and extrinsic centers in AlGaAs. 14 An important difference with QDs is that single impurity centers are usually not able to confine two excitons: as an example we are not aware of biexcitons in nitrogen-vacancy centers in diamond.…”

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Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

Sarti

Muñoz‐Matutano

Bauer

et al. 2013

Journal of Applied Physics

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The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device.

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“…Due to their ultra small mode volumes [6] and large surface to volume ratio, the PCM resonant frequency is highly sensitive to its environment. While this sensitivity may be exploited for novel sensing applications, it complicates solid-state cavity quantum electrodynamic (QED) experiments that depend on a precise resonance condition between a cavity mode and an embedded single quantum dot (QD) [7,8,9, 10], single atom [11] or single impurity [12]. This paper describes a slow red-shift of the PCM mode emission frequency that can occur at low operation temperatures.…”

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Frequency control of photonic crystal membrane resonators by monolayer deposition

Strauf

Rakher

Carmeli

et al. 2006

Applied Physics Letters

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We study the response of GaAs photonic crystal membrane resonators to thin film deposition. Slow spectral shifts of the cavity mode of several nanometers are observed at low temperatures, caused by cryo-gettering of background molecules. Heating the membrane resets the drift and shielding will prevent drift altogether. In order to explore the drift as a tool to detect surface layers, or to intentionally shift the cavity resonance frequency, we studied the effect of self-assembled monolayers of polypeptide molecules attached to the membranes. The 2 nm thick monolayers lead to a discrete step in the resonance frequency and partially passivate the surface.Photonic crystal membrane microcavities (PCM) are promising candidates for applications ranging from quantum and classical communication [1], to microlasers [2,3] and sensing devices [4,5]. Due to their ultra small mode volumes [6] and large surface to volume ratio, the PCM resonant frequency is highly sensitive to its environment. While this sensitivity may be exploited for novel sensing applications, it complicates solid-state cavity quantum electrodynamic (QED) experiments that depend on a precise resonance condition between a cavity mode and an embedded single quantum dot (QD) [7,8,9, 10], single atom [11] or single impurity [12]. This paper describes a slow red-shift of the PCM mode emission frequency that can occur at low operation temperatures. We ascribe this shift to molecular condensation on the PCM surface. We further describe methods used to fully curtail the drift, and in addition, we report on the first demonstration of a controlled red-shift of the PCM mode by the adsorption of a self-assembled monolayer (SAM) of polypeptide molecules.We are particularly interested in PCM devices operated at low temperatures in such a way that embedded QDs display a discrete energy spectrum. As a model system a square-lattice PCM geometry with one missing air hole (S1) has been chosen, which is known to confine the fundamental mode in the proximity of the air-semiconductor interface [13]. A single layer of selfassembled InAs QDs was embedded in the 180 nm thick GaAs membrane and emits around 950 nm [14] under non-resonant laser excitation at 780 nm. Figure 1a shows a spectrum of the fundamental cavity mode taken at pump powers of 15 µW, which has been recorded with a micro photoluminescence (micro-PL) setup [15]. At these excitation conditions the cavity mode is clearly visible at 1.3293 eV with a quality factor (Q-factor) of 1900. The 2 µm diameter laser excitation spot has to be positioned with an accuracy of ±0.5 µm with respect to the cavity defect region (Fig. 1c), demonstrating the strongly localized character of the mode. Individual QD transitions are visible under low pump power excitation of 50 nW, which have been identified by their pronounced antibunching signature (not shown). Another set of two spectra was taken 200 min later as shown in Fig. 1b. While the single QD emission energy at 1.31780 ± 2 · 10 −5 eV did not change in the entire observation perio...

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Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor

Cited by 101 publications

References 27 publications

Propagation of nonclassical optical radiation through a semiconductor slab

Propagation of nonclassical optical radiation through a semiconductor slab

Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

Frequency control of photonic crystal membrane resonators by monolayer deposition

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