Quantum oscillations and interference effects in strained n- and p-type modulation doped GaInNAs/GaAs quantum wells

Sarcan, Fahrettin; Nutku, Ferhat; Donmez, Omer; Kuruoğlu, Furkan; Mutlu, Selman; Erol, Ayşe; Yıldırım, Sinem; Arıkan, Mehmet Kemal

doi:10.1088/0022-3727/48/30/305108

Cited by 11 publications

(3 citation statements)

References 49 publications

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“…Due to the low-quality 2D electron gas, neighbouring Landau levels (LLs) overlap and broaden; thus, Hall resistance is not properly quantised. The broadening of the LLs ( t / ) increases with increasing 2D carrier density [51]. Therefore, broadening effect observed in TNBi04A and TNBi04B can be ascribed for their higher 2D density and lower electron mobility than as-grown one (TNBi04).…”

Section: Parameters Valuesmentioning

confidence: 91%

Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility

Donmez¹,

Aydın²,

Ardalı³

et al. 2020

Semicond. Sci. Technol.

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We investigate electronic transport properties of as-grown and annealed n-type modulationdoped Al 0.15 Ga 0.85 As/GaAs 1−x Bi x (x=0 and 0.04) quantum well (QW) structures using magnetotransport measurements in the temperature range 4.2 K and 60 K and at magnetic fields up to 18 T. Thermal annealing process was applied at two different temperatures, 700 °C and 350 °C during 60 s and 180 s, respectively. We find that electron effective mass and 2D electron density in as-grown Bi-containing sample are slightly lower than that in Bi-free one. Furthermore, quantum electron mobility and quantum scattering time are observed to be decreased in Bi-containing samples. The annealing process at 700 °C causes a slight increase in electron effective mass and 2D electron density. A negligible decrease in electron effective mass and an increase in 2D electron density are determined following annealing at 350 °C. The observed change in electron effective mass following thermal annealing process is attributed to changing 2D electron density in the samples. No improvement on quantum electron mobility and quantum scattering time are observed following thermal annealing at both process temperatures. We determine that one electron subband (e1) for as-grown and annealed (at 700 °C for 60 s) Bicontaining QWs and two electron subbands (e1 and e2) for the annealed (at 350 °C for 180 s) GaAsBi QW sample and the Bi-free QW sample contribute to electronic transport. Our results reveal that there is no significant direct effect of Bi on effective electron mass, but an indirect effect, in which Bi can provoke changes in 2D electron density and hence causes not to observe actual band-edge electron mass but a deviation from its band-edge value. Therefore, it can be concluded that dispersion curve of conduction band does not change as an effect of Bi incorporation in GaAs.

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Section: Parameters Valuesmentioning

confidence: 91%

Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility

Donmez¹,

Aydın²,

Ardalı³

et al. 2020

Semicond. Sci. Technol.

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“…And also, experimental values were established for the quantum pit GaAs, under the illumination of microwave radiation. In the works [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] various experimental techniques have been developed for determining the temperature dependence of the Shubnikov-de Haase oscillation in heterostructures with quantum wells with parabolic and non-parabolic laws of dispersion. For example, in the work [6], quantum oscillation phenomena were observed in heterostructures with quantum wells Ga 1−x In x N y As 1−y using magnetotransport measurements.…”

Section: Introductionmentioning

confidence: 99%

Determination of the Dependence of Transverse Electrical Conductivity and Magnetoresistance Oscillations on Temperature in Heterostructures Based on Quantum Wells

Erkaboev,

Rakhimov

2023

e-J. Surf. Sci. Nanotechnol.

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For the first time, the temperature dependence of transverse magnetoresistance oscillations of heterostructured semiconductors based on quantum wells was determined by temperature variation of the two-dimensional energy state density. A new analytical expression was developed to calculate the temperature dependence of the transverse electrical conductivity and magnetoresistance of the quantum well. A mathematical model has been developed that determines the temperature dependence of the first and second order differential magnetoresistance oscillations due to magnetic field induction. Using the proposed model, dissociation of continuous 2d ? ðE; B; T; dÞ at constant low temperatures into amplitudes of quantum oscillations is substantiated based on the proposed model. It has been observed that the results of experiments on @ð 2d ? ðE; B; T; dÞÞ=@B obtained at consistently low temperatures of a narrow band quantum winding (In x Ga 1−x Sb) are transformed into a continuous energy spectrum in the dynamics of high temperatures.

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“…There have been plenty of studies on the optical and structural properties of GaInNAs so far [9,10]. On the other hand, there are just a few papers focused on the electronic properties of low-dimensional GaInNAs structures [7,11,12]. The drift velocity and the characteristic of drift velocity under a high electric field are fundamental properties for designing electronic and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

A study of electric transport in n- and p-type modulation-doped GaInNAs/GaAs quantum well structures under a high electric field

Sarcan

Mutlu

Çokduygulular

et al. 2018

Semicond. Sci. Technol.

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We present the results of longitudinal carrier transport under a high electrical field in n-and p-type modulation-doped Ga 0.68 In 0 . 32 N y As 1−y /GaAs (y=0.009, 0.017) quantum well (QW) structures. Nitrogen composition-dependent drift velocities of electrons are observed to be saturated at´-1.7 10 cm s 7 1 and´-1.2 10 cm s 7 1 at 77 K for the samples with y=0.009 and y=0.017, respectively, while the drift velocities of holes do not saturate but slightly increase at the applied electric field in the range of interest. The hole drift velocity is observed to be higher than the electron drift velocity. The electron mobility exhibits an almost temperatureindependent characteristic. On the other hand, the hole mobility exhibits a conventional temperature dependence of modulation-doped QW structures. As the temperature increases, the drift velocity of the electrons exhibits an almost an temperature-insensitive characteristic, but, on the other hand, for holes, drift velocity decreases approximately from 10 7 -10 6 cm s −1 . It is observed that the drift velocities of electrons and holes are N-dependent and suppressed at higher electric fields. Furthermore, experimental results show that there is no evidence of negative differential velocity (NDV) behaviour for both n-and p-type samples. To explore the observed electron and hole drift velocity characteristic at high electric fields, we use a simple theoretical model for carrier transport, which takes into account the effect of non-drifting hot phonons. The mobility mapping technique (comparison method) is used to extract hot hole temperature in order to employ it in the non-drifted phonon distribution and to obtain the drift velocity-electric field curves. Then hot electron temperatures are obtained from the drift velocity-electric field curves as a fit parameter using non-drifted hot phonon dynamics. The analytical model is wellmatched to the experimental u d -E curves, indicating that carrier-hot phonon scattering is the main reason for suppressing the NDV mechanism in GaInNAs/GaAs QW structures with a carrier density higher than 10 17 cm −3 .

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Quantum oscillations and interference effects in strained n- and p-type modulation doped GaInNAs/GaAs quantum wells

Cited by 11 publications

References 49 publications

Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility

Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility

Determination of the Dependence of Transverse Electrical Conductivity and Magnetoresistance Oscillations on Temperature in Heterostructures Based on Quantum Wells

A study of electric transport in n- and p-type modulation-doped GaInNAs/GaAs quantum well structures under a high electric field

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