Quantum oscillations in a two-dimensional electron gas in black phosphorus thin films

Li, Likai; Ye, Guo Jun; Tran, Vy; Fei, Ruixiang; Chen, Guorui; Wang, Huichao; Wang, Jian; Watanabe, Kenji; Taniguchi, Takashi; Yang, Li; Chen, Xian Hui; Zhang, Yuanbo

doi:10.1038/nnano.2015.91

Cited by 303 publications

(337 citation statements)

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“…Similar to silicon (Si), it is a centrosymmetric material and Dyakonov-Perel spin relaxation is expected to be inhibited 19 . Elliott-Yafet (EY) remains as primary spin scattering mechanism and hence, the recent report by L. Li et al 18 on very high electron mobilities suggests long spin relaxation lengths as well.In this letter, we demonstrate that the necessary conditions for 2D semiconductor spintronics, i. e. electrical spin injection, transport and detection up to RT -can all be realized in ultra-thin bP devices. By taking advantage of the recent advances in van der Waals heterostructure fabrication methods, we fabricate non-local spin valve devices by fully encapsulating bP with hexagonal boron nitride (BN) layers.…”

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Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

et al. 2017

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Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron's spin 1 . While graphene is very promising for spin communication due to its extraordinary electron mobility, the lack of a band gap restricts its prospects for semiconducting spin devices such as spin diodes and bipolar spin transistors 2 . The recent emergence of 2D semiconductors could help overcome this basic challenge. In this letter we report the first important step towards making 2D semiconductor spin devices. We have fabricated a spin valve based on ultra-thin (~ 5 nm) semiconducting black phosphorus (bP), and established fundamental spin properties of this spin channel material which supports all electrical spin injection, transport, precession and detection up to room temperature (RT). Inserting a few layers of boron nitride between the ferromagnetic electrodes and bP alleviates the notorious conductivity mismatch problem and allows efficient electrical spin injection into an n-type bP. In the non-local spin valve geometry we measure Hanle spin precession and observe spin relaxation times as high as 4 ns, with spin relaxation lengths exceeding 6 µm. Our experimental results are in a very good agreement with first-principles calculations and demonstrate that Elliott-Yafet spin relaxation mechanism is dominant. We also demonstrate that spin transport in ultra-thin bP depends strongly on the charge carrier concentration, and can be manipulated by the electric field effect. 2 Electron spin is an important degree of freedom which can complement or even replace charge in information storage and logic devices 3 . For spin-based electronics, it is essential to have materials with long spin relaxation times at RT 1 . With respect to the material selection, semiconductors in particular offer new opportunities that are unfeasible in metal-based spintronics devices. These include doping by the electric field effect and gate controlled amplification/switching actions 4 . The boom of semiconductor spintronics started with the demonstration of the electrical spin injection into GaAs by R. Fiederling et al., also later by H.Ohno et al. 5,6 . I. Appelbaum and his colleagues further fostered this by adding silicon into the spintronics materials family 7 . More recently 2D materials such as graphene have captured the interest of engineers and scientists on the grounds of their high electronic mobility and the simultaneous ability to tune their charge carrier concentrations by the electric field effect 8 .Graphene has already been investigated very extensively in the spintronics community since the first unequivocal demonstration of RT spin injection by N. Tombros et al., 1,9 . While the first devices showed spin lifetimes of only 0.1 ns 9 , the new generation of graphene devices that have surfaces within the last year show remarkable spin lifetimes of ~ 10 ns, making graphene suitable for spin communication channels 10 .Conversely, the zero-band gap nature of graphene does not al...

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Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

et al. 2017

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“…In the limit of the low-carrier density regime, where the average distance between two neighboring in-plane holes n −1/2 is larger than the effective Bohr radius a 0 = 4πε 2 /me 2 of the holes in the interface, 2D holes can form a strongly correlated system dominated by the Coulomb interaction [10]. Using BP dielectric constant ε = 12ε 0 [40] and the effective mass of hole carriers in different layers of BP [26], a Bohr radius and the corresponding carrier density n c can be obtained in Fig. 4(b).…”

Section: B Negative Compressibilitymentioning

confidence: 99%

“…The effects of negative compressibility have been previously observed in ultraclean systems, such as in high-quality LaAlO 3 /SrTiO 3 interfaces [9], two-dimensional (2D) GaAs systems [4,[10][11][12], and ferroelectric materials [13], where Coulomb interactions are normally strong and play an important role in transport properties. Newly emerged 2D layered semiconductors, such as transition-metal dichalcogenides [14][15][16][17][18] and black phosphorus (BP) [19][20][21][22][23][24][25][26][27][28], are new platforms for both nanotechnology and fundamental physics. Among these 2D materials, atomically thin BP is a promising channel material of FETs with high mobility [24][25][26][27] and high stability by encapsulating BP with hexagonal boron nitride (BN) sheets.…”

Section: Introductionmentioning

confidence: 99%

“…Newly emerged 2D layered semiconductors, such as transition-metal dichalcogenides [14][15][16][17][18] and black phosphorus (BP) [19][20][21][22][23][24][25][26][27][28], are new platforms for both nanotechnology and fundamental physics. Among these 2D materials, atomically thin BP is a promising channel material of FETs with high mobility [24][25][26][27] and high stability by encapsulating BP with hexagonal boron nitride (BN) sheets. Our previous work has found that high-quality BN-BP-BN heterostructures with clean interfaces are ideal 2D electron systems with high mobility [25].…”

Section: Introductionmentioning

confidence: 99%

“…Our previous work has found that high-quality BN-BP-BN heterostructures with clean interfaces are ideal 2D electron systems with high mobility [25]. High-quality BN-BP-BN heterostructures also offer great opportunities to investigate quantum Hall effects [26], as well as Coulomb interactions of charge carriers in 2D materials.…”

Section: Introductionmentioning

confidence: 99%

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Negative compressibility in graphene-terminated black phosphorus heterostructures

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Negative compressibility is a many-body effect wherein strong correlations give rise to an enhanced gate capacitance in two-dimensional (2D) electronic systems. We observe capacitance enhancement in a newly emerged 2D layered material, atomically thin black phosphorus (BP). The encapsulation of BP by hexagonal boron nitride sheets with few-layer graphene as a terminal ensures ultraclean heterostructure interfaces, allowing us to observe negative compressibility at low hole carrier concentrations. We explain the negative compressibility based on the Coulomb correlation among in-plane charges and their image charges in a gate electrode in the framework of Debye screening.

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Two‐Dimensional Non‐Layered Materials: Synthesis, Properties and Applications

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Holding novel physical properties, high flexibility and strong integration ability with Si‐based electronic devices, two‐dimensional (2D) non‐layered materials have received considerable attentions in recent years. To achieve the 2D anisotropic growth, various strategies have been developed. And a variety of applications have been demonstrated. This review provides an overview on the recent progress of this material family. The scope will cover the preparation strategies, including dry methods and wet chemical approaches, as well as the applications in catalysis, energy conversion and storage, optoelectronic devices and topological crystalline insulators. Conclusion and future perspectives are also given.

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Quantum oscillations in a two-dimensional electron gas in black phosphorus thin films

Cited by 303 publications

References 32 publications

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Negative compressibility in graphene-terminated black phosphorus heterostructures

Two‐Dimensional Non‐Layered Materials: Synthesis, Properties and Applications

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