We present a novel theoretical approach to the problem of light energy conversion in thermostated semiconductor junctions. Using the classical model of a two-level atom, we deduced formulas for the spectral response and the quantum efficiency in terms of the input photons’ non-zero chemical potential. We also calculated the spectral entropy production and the global efficiency parameter in the thermodynamic limit. The heat transferred to the thermostat results in a dissipative loss that appreciably controls the spectral quantities’ behavior and, therefore, the cell’s performance. The application of the obtained formulas to data extracted from photovoltaic cells enabled us to accurately interpolate experimental data for the spectral response and the quantum efficiency of cells based on Si-, GaAs, and CdTe, among others.