Quantum Sensing of Paramagnetic Spins in Liquids with Spin Qubits in Hexagonal Boron Nitride

Gao, Xingyu; Vaidya, Sumukh; 彭菊,; Dikshit, Saakshi; Shen, Kunhong; Chen, Yong P.; Li, Tongcang

doi:10.1021/acsphotonics.3c00621

Cited by 15 publications

(1 citation statement)

References 49 publications

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“…In comparison with NV centers embedded in highly rigid, threedimensional (3D) diamond, spin defects contained in exfoliable, 2D materials exhibit improved compatibility with nanodevice integration, providing an attractive platform for implementing ultrasensitive quantum metrology measurements by exploiting the atomic length scale proximity between the spin sensors and objects of interest (20)(21)(22)(23). In the current state of the art, the local sensing of electrical, magnetic, and thermal flux arising from solid-state materials using spin defects in hBN has been experimentally demonstrated in both confocal and wide-field optical microscopy configurations (5,21,22,24), and the development of transformative approaches to revolutionize the current quantum technologies is under way (25)(26)(27)(28)(29).…”

Section: Introductionmentioning

confidence: 99%

Sensing spin wave excitations by spin defects in few-layer-thick hexagonal boron nitride

Zhou,

Lu,

Chen

et al. 2024

Sci. Adv.

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Optically active spin defects in wide bandgap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of “hard” and “soft” condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y 3 Fe 5 O 12 (YIG) by boron vacancy V B − spin defects contained in few-layer-thick hexagonal boron nitride nanoflakes. We show that the ferromagnetic resonance and parametric spin excitations can be effectively detected by V B − spin defects under various experimental conditions through optically detected magnetic resonance measurements. The off-resonant dipole interaction between YIG magnons and V B − spin defects is mediated by multi-magnon scattering processes, which may find relevant applications in a range of emerging quantum sensing, computing, and metrology technologies. Our results also highlight the opportunities offered by quantum spin defects in layered two-dimensional vdW materials for investigating local spin dynamic behaviors in magnetic solid-state matters.

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Section: Introductionmentioning

confidence: 99%

Sensing spin wave excitations by spin defects in few-layer-thick hexagonal boron nitride

Zhou,

Lu,

Chen

et al. 2024

Sci. Adv.

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Double Etch Method for the Fabrication of Nanophotonic Devices from van der Waals Materials

Schaeper,

Spencer,

Scognamiglio

et al. 2024

ACS Photonics

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The integration of van der Waals (vdW) materials into photonic devices has laid out a foundation for many new quantum and optoelectronic applications. Despite tremendous progress in the nanofabrication of photonic building blocks from vdW crystals, there are still limitations, specifically with largearea devices and masking. Here, we focus on hexagonal boron nitride (hBN) as a vdW material and present a double etch method that overcomes problems associated with methods that employ metallic films and resist-based films for masking. Efficacy of the developed protocol is demonstrated by designing and fabricating a set of functional photonic components�including waveguides, ring resonators, and photonic crystal cavities. The functionality of the fabricated structures is demonstrated through optical characterization over several key spectral ranges. These include the near-infrared and blue ranges, where the hBN boron vacancy (V B − ) spin defects and the coherent B center quantum emitters emit, respectively. The double etch method enables fabrication of highquality factor optical cavities and constitutes a promising pathway toward on-chip integration of vdW materials.

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Quantum sensing with optically accessible spin defects in van der Waals layered materials

Fang,

Wang,

Marie

et al. 2024

Light Sci Appl

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Quantum sensing has emerged as a powerful technique to detect and measure physical and chemical parameters with exceptional precision. One of the methods is to use optically active spin defects within solid-state materials. These defects act as sensors and have made significant progress in recent years, particularly in the realm of two-dimensional (2D) spin defects. In this article, we focus on the latest trends in quantum sensing that use spin defects in van der Waals (vdW) materials. We discuss the benefits of combining optically addressable spin defects with 2D vdW materials while highlighting the challenges and opportunities to use these defects. To make quantum sensing practical and applicable, the article identifies some areas worth further exploration. These include identifying spin defects with properties suitable for quantum sensing, generating quantum defects on demand with control of their spatial localization, understanding the impact of layer thickness and interface on quantum sensing, and integrating spin defects with photonic structures for new functionalities and higher emission rates. The article explores the potential applications of quantum sensing in several fields, such as superconductivity, ferromagnetism, 2D nanoelectronics, and biology. For instance, combining nanoscale microfluidic technology with nanopore and quantum sensing may lead to a new platform for DNA sequencing. As materials technology continues to evolve, and with the advancement of defect engineering techniques, 2D spin defects are expected to play a vital role in quantum sensing.

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Quantum Sensing of Paramagnetic Spins in Liquids with Spin Qubits in Hexagonal Boron Nitride

Cited by 15 publications

References 49 publications

Sensing spin wave excitations by spin defects in few-layer-thick hexagonal boron nitride

Sensing spin wave excitations by spin defects in few-layer-thick hexagonal boron nitride

Double Etch Method for the Fabrication of Nanophotonic Devices from van der Waals Materials

Quantum sensing with optically accessible spin defects in van der Waals layered materials

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