Quantum sensing using Type II InAs/GaSb superlattice for infrared detection

Razeghi, Manijeh; Gin, Aaron; Wei, Yajun; Bae, Junjik; Nah, Jongbum

doi:10.1016/s0026-2692(03)00035-1

Cited by 14 publications

(9 citation statements)

References 10 publications

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“…Although the growth of Sb-based III-V NWs is more difficult than that of other III-V NWs, both 'top-down' and 'bottomup' approaches have been developed for the controllable growth of high-quality thin Sb-based III-V NWs in the past decade [6,42,52,63,[106][107][108][109][110][111]. 'Top-down' approach has been promoted in microelectronic industry.…”

Section: Recent Advances In the Synthesis Of Sb-based Iii-v Nwsmentioning

confidence: 99%

Recent advances in Sb-based III–V nanowires

et al. 2019

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Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sbbased III-V nanowires (NWs) attracted significant interests in high speed electronics, longwavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effecttransistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.

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Section: Recent Advances In the Synthesis Of Sb-based Iii-v Nwsmentioning

confidence: 99%

Recent advances in Sb-based III–V nanowires

et al. 2019

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“…We illustrated the capability of COBRA with results obtained on the no-common-atom superlattice system GaSb-InAs, which is of interest as an infrared detector. 11 However, the applicability of COBRA is quite general and requires only that the film (or nanostructure) be in registry with the substrate on which it is deposited. This condition is met by a vast array of current materials that are relevant to microelectronic devices and nanostructures.…”

Section: Discussionmentioning

confidence: 99%

Imaging and manipulating heterostructure interfaces (Keynote Paper)

et al. 2005

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Epitaxial heterostructures constitute a wide variety of modern microelectronics devices. In the limit of ever decreasing feature dimensions, now entering the nanoscale in some cases, the interfaces of such devices are crucial to their operation and performance. In general the properties of the interfaces will differ significantly from those of the bulk structure of either the substrate or the heteroepitaxial film. To date, direct, non-destructive characterizations of the atomic-level structure of films and interfaces have not been readily available and this has hampered the design and optimization of heteroepitaxial devices. We describe here a novel x-ray interference method which is useful for imaging such structures with sub-Ångstrom spatial resolution while also providing chemical composition information from a map of the electron density. We illustrate the method, known as Coherent Bragg Rod Analysis (COBRA), with recent results on GaSb-InAs heterostructures of interest as infrared sources and detectors. We show that, with detailed knowledge of the interfaces from COBRA, it is now feasible to correlate specific molecular beam epitaxy growth conditions with desired electronic characteristics associated with the interface bonding. The COBRA method is quite general and only requires an epitaxial relationship between the substrate and the nanostructure that is deposited on it.

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“…Type II superlattices are an alternative to these conventional infrared detectors because of their misaligned band alignment, which results in lower Auger recombination and higher device sensitivity. Rezeghi et al 18 developed the infrared photodectors based on arrays of nanopillar Type II InAs/GaSb Superlattice (Fig. 1 left).…”

Section: Introductionmentioning

confidence: 99%