Quantum simulation for separate double gate InA1As/InGaAs HEMT

Abstract

A quantum model is used for the simulation of the double-gate (DG) InAlAs/InGaAs HEMT for nanometer gate dimension with two separate gate controls. Classical approach fails from the nanoscale device modeling viewpoint. The Quantum Moments model includes the quantization effects and accordingly model the various vital characteristics of the device. The effect of quantization can be observed majorly in the electron concentration profile presented in the paper. Moreover, the separate gate provides an improved control on the channel and various device characteristics. I D -V DS , I D -V GS , transconductance, output conductance, capacitances and cut-off frequency of the device are shown and discussed in the paper.