Quantum size dependent optical nutation in CdSe/ZnS/CdSe quantum dot quantum well

Fang, Yinan; Xiao, Meng; Yao, Duanzheng

doi:10.1016/j.physe.2010.03.036

Cited by 28 publications

(13 citation statements)

References 9 publications

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“…In this paper, the potential in the core region is supposed to be zero, and the potential difference between two materials is constant [ 25 ]. There are various methods for investigating electronic structures of quantum dot systems [ 26 - 28 ]. The effective mass approximation is employed in this study.…”

Section: Methodsmentioning

confidence: 99%

Investigation of quadratic electro-optic effects and electro-absorption process in GaN/AlGaN spherical quantum dot

et al. 2014

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Quadratic electro-optic effects (QEOEs) and electro-absorption (EA) process in a GaN/AlGaN spherical quantum dot are theoretically investigated. It is found that the magnitude and resonant position of third-order nonlinear optical susceptibility depend on the nanostructure size and aluminum mole fraction. With increase of the well width and barrier potential, quadratic electro-optic effect and electro-absorption process nonlinear susceptibilities are decreased and blueshifted. The results show that the DC Kerr effect in this case is much larger than that in the bulk case. Finally, it is observed that QEOEs and EA susceptibilities decrease and broaden with the decrease of relaxation time.

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Section: Methodsmentioning

confidence: 99%

Investigation of quadratic electro-optic effects and electro-absorption process in GaN/AlGaN spherical quantum dot

et al. 2014

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“…Among this category, the quantum dots with the smaller bulk band gap are located between a core and outer shell of the material with the larger band gap. With the progress synthesis and fabrication of different nanomaterials various kinds of tubular structures such as CdS/HgS/CdS [7][8], CdSe/ZnS/CdSe [9] and Ga1-xAlxAs / GaAs/ Ga1-xAlxAs [10] and others, are obtained and attract much attention. The effect of an applied external field on the physical properties of such structures has been reported experimentally and theoretically.…”

Section: Introductionmentioning

confidence: 99%

Impurity position effect on the diamagnetic susceptibility of a magneto-donor in GaAs inhomogeneous quantum dots

et al. 2020

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Inhomogeneous Quantum Dot (IQD) semiconductor represents a newest trend in condensed matter, due to their important quantum levels and the outstanding properties. In this work, the impurity position effect on the diamagnetic susceptibility of a shallow magneto-donor, confined to move in (IQD) made out of Ga1-xAlxAs / GaAs/ Ga1-xAlxAs is reported theoretically. With the increase of the magnetic field, the diamagnetic susceptibility increases. The results using variational method reveal that diamagnetic susceptibility depends on many parameters including the impurity position, the external magnetic field and the nanostructure size. The magnetic field effect is more pronounced when the donor is placed near the extremities of the spherical layer (off-center). In addition, a maximum of diamagnetic susceptibility is observed, corresponding to a critical position value, for strong confinement regime and when the impurity is located in the spherical layer center.

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“…[15][16][17][18][19] Research into one particular high-quality quantum dot (QD) consisting of II/VI semiconductors, a ligand-stabilized CdTe QD, has recently attracted interest because of the quantum confinement effect, and because of its widespread use as biomarkers, luminescent materials, and photon crystals. See DOI: 10.1039/ c5nr00494b a two QWs could be identified at two given wavelengths in buried interfacial space charge regions (SCRs) of CdTe/CdS/ ligand nanoparticles with a core-shell structure. [26][27][28][29]30 The study of QDQW's microstructures in the self-assembled CdTe/CdS/ligand nanostructure, however, has rarely been reported so far.…”

Section: Introductionmentioning

confidence: 99%

Carrier transport in quantum dot quantum well microstructures of the self-assembled CdTe/CdS/ligand core–shell system

Shan

Zhu

et al. 2015

Nanoscale

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The study on the quantum dot quantum well (QDQW) microstructure modified by choosing different ligands containing a sulfhydryl group is of significance because it enables one to regulate photoexcited free charge carriers' (FCCs') transport behaviours in high-quality CdTe/ligand QDs via a self-assembled way. The photoelectron characteristics of ligand-capped CdTe nanoparticles were probed by a combination of surface photovoltaic (SPV) and photoacoustic technologies, supplemented by a computer simulation method of the CASTEP module. The experiment reveals that the D-value ΔEWi obtained by the associated two parameters of the SPV spectroscopy was closely related to the quantum confinement energy in the self-assembled CdTe/CdS/ligand core-shell system. In the paper the D-value was termed the depth of QWs, which were buried in the space charge regions located in the graded-band-gap and on either side of the shell-CdS. Obvious resonance quantum tunnelling may occur in the energy band structure with deep QWs on using certain ligands, resulting in an extended diffusion length of the FCCs on illumination of the photon energy hν ≥ Eg, core-CdTe, and in a strong SPV response at a specific wavelength region. In addition, the carrier-longitudinal optical phonon interaction is the reciprocal of the carriers' lifetime. The d-frontier orbital in the graded-band-gap plays an important role in both the microstructure and the resonance quantum tunnelling of the QDQW system according to the CASTEP calculations.

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Quantum size dependent optical nutation in CdSe/ZnS/CdSe quantum dot quantum well

Cited by 28 publications

References 9 publications

Investigation of quadratic electro-optic effects and electro-absorption process in GaN/AlGaN spherical quantum dot

Investigation of quadratic electro-optic effects and electro-absorption process in GaN/AlGaN spherical quantum dot

Impurity position effect on the diamagnetic susceptibility of a magneto-donor in GaAs inhomogeneous quantum dots

Carrier transport in quantum dot quantum well microstructures of the self-assembled CdTe/CdS/ligand core–shell system

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