Quantum size effects and enhancement of the oscillator strength of excitons in chains of silicon atoms

Kanemitsu, Yoshihiko; Suzuki, Katsunori; Nakayoshi, Yoshiaki; Masumoto, Yasuaki

doi:10.1103/physrevb.46.3916

Cited by 87 publications

(33 citation statements)

References 13 publications

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“…A number of mechanisms and recombination processes have been proposed, pursuing five main concepts: recombination of the photoexcited carriers confined within the c-Si core of Si NCs [1,2], reconstruction of the states in very small Si NCs (inner or surface Si-Si bond) [3,4], Si-based molecules (Si clusters with different morphology, polysilane) [5][6][7], point defects in SiO 2 [8,9] or direct transition at the Γ -point [10]. A border between the mechanisms is sometimes questionable.…”

mentioning

confidence: 99%

Ultrafast photoluminescence dynamics of blue‐emitting silicon nanostructures

Žídek

Trojánek

Malý

et al. 2011

Phys. Status Solidi (c)

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mentioning

confidence: 99%

Ultrafast photoluminescence dynamics of blue‐emitting silicon nanostructures

Žídek

Trojánek

Malý

et al. 2011

Phys. Status Solidi (c)

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“…Although other possible explanations have been proposed in the literature [13,14], the confinement origin seems now to be well supported by theoretical calculations of the energy levels in small size silicon clusters [15,16,17,18,19] and by several different experimental approaches attesting for the presence of quantum-sized crystallites in porous silicon layers [20,21,22,23]. Following the confinement model, the observation of a simultaneous emission of light during anodic oxidation requires that radiative recombination of carriers takes place within the quantumsized crystallites in the porous layer.…”

Section: Mechanisms Invol Yed In the Electroluminescencementioning

confidence: 96%

Electrochemical Investigation of the Electroluminescent Properties of Porous Silicon

Müller

Hérino

Ligeon

et al. 1993

Optical Properties of Low Dimensional Silicon Structures

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The electroluminescence which is observed during the electrochemical oxidation of porous layers formed in p-type silicon substrates is studied in detail. The different characteristics of the emission are analysed along the line of a model which expresses the energy dependence of the emission. The model is developped in the hypothesis that the visible light emission originates in the confinement of charge carriers in the quantum-sized crystallites which form the material, and that its efficiency is determined by the non-radiative processes, which involve the carrier escape from the confined zone through a tunnelling mechanism. This model is shown to be well supported by the experimental results, and allows to understand the spectral shifts and the intensity variations observed during the electrochemical oxidation of the porous layer.

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“…The size-dependent properties of nanocrystalline (NC) solids have attracted considerable interest due to their potential applications as well as the opening of new scientific questions [1][2][3][4][5][6][7]. A drastic size reduction to a few nanometers may lead to many special structures with the singular physical properties.…”

Section: Introductionmentioning

confidence: 99%

“…A drastic size reduction to a few nanometers may lead to many special structures with the singular physical properties. Many experiments have been made to explore into the causes of the singular physical properties induced by structural characters of NC solids [6,7]. Some interesting results such as quantum size effects, have been determined [6].…”

Section: Introductionmentioning

confidence: 99%

“…Many experiments have been made to explore into the causes of the singular physical properties induced by structural characters of NC solids [6,7]. Some interesting results such as quantum size effects, have been determined [6]. For instance, the energy gap between conduction band and valence band of NC silicon increases as compared with that of bulk silicon [7].…”

Section: Introductionmentioning

confidence: 99%

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Size and randomness effects on the temperature-dependent hopping conductivity of nanocrystalline chains

2001

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Developing a renormalization group approach, we study the hopping conductivity of nanocrystalline chains with different site energies. Exact calculations show that many parameters including nanosizes, randomness of grain distributions, lattice distortions, site energies, transition rates, Fermi energy, and temperature influence the conductivity. Some new singular features, for example the frequency shift, the amplitude fluctuations, and the interchange between "peak" and "valley" behavior of the imaginary part of the conductivity can be caused by certain parameters mentioned above, while the interface distortions modulate mainly the overall amplitudes of the conductivity at the whole frequency region. PACS. 61.72.-y Defects and impurities in crystals; microstructure -64.60.Ak Renormalization-group, fractal, and percolation studies of phase transitions -71.24.+q Electronic structure of clusters and nanoparticles -72.15.-v Electronic conduction in metals and alloys

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Quantum size effects and enhancement of the oscillator strength of excitons in chains of silicon atoms

Cited by 87 publications

References 13 publications

Ultrafast photoluminescence dynamics of blue‐emitting silicon nanostructures

Ultrafast photoluminescence dynamics of blue‐emitting silicon nanostructures

Electrochemical Investigation of the Electroluminescent Properties of Porous Silicon

Size and randomness effects on the temperature-dependent hopping conductivity of nanocrystalline chains

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