Quantum size effects in n-PbTe∕p-SnTe∕n-PbTe heterostructures

Abstract

The dependencies of the thermoelectric properties of n-PbTe∕p-SnTe∕n-PbTe heterostructures on the SnTe quantum well width (dSnTe=0.5–6.0nm) at fixed PbTe barrier layers thicknesses were studied. It was established that the thickness dependencies of the Seebeck coefficient, electrical conductivity, the Hall coefficient, charge carrier mobility, and the thermoelectric power factor are distinctly nonmonotonic. The observed effect is attributed to the size quantization of the energy spectrum of the hole gas in a SnTe quantum well.

Spin-filtered edge states with an electrically tunable gap in a two-dimensional topological crystalline insulator

“…From the material standpoint, thin films of IV-VI semi-conductors have been grown epitaxially [23][24][25] and extensively studied [34]. In particular, ultrathin SnTe quantum wells have been made with high quality [35][36][37]. Related materials PbTe, PbSe and PbS, while topologically trivial in bulk form, can become inverted in strained thin films [7], which further broadens the material base available for use.…”

Quantum size effects in a one-dimensional semimetal

“…Since then the field has preserved its freshness to date, expanding its domain to include the study of size effects in conventional metals [3], semiconductors [4], superconductors [5] and, since recently, nanoclusters [6], carbon nanotubes [7] and fullerenes [8]. Recent advances in nanofabrication techniques have made it possible to extend experimental investigation of QSEs in various types of semimetallic structures from two-dimensional (2D) thin films to onedimensional (1D) nanowires [9]- [17]. On the other hand, despite the advances on an experimental front, there is not a theoretical model for quantitative understanding of measured data in such structures.…”

Experimental Observation of Dirac-like Surface States and Topological Phase Transition inPb1−xSnxTe(111)Yan1, Liu2, Zang3 et al. 2014Phys. Rev. Lett.1197860View full textAdd to dashboardCite

“…2(a) intersects the bulk valence band due to the p-type Sn vacancy as the dominant dopant in SnTe [32][33][34]. It is therefore difficult to access the Dirac point of the topological surface states of SnTe in the ARPES measurement [15,16,18,20].…”