Quantum Size Effects in Ultrathin Layered Magnetic Systems

Bruno, P.

doi:10.12693/aphyspola.91.37

Cited by 5 publications

(3 citation statements)

References 64 publications

(92 reference statements)

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“…Secondly, there may exist a contribution to the coupling from real carriers (electrons and/or holes). In case of strongly degenerate electron (hole) gas inside the well, the corresponding contribution is the same as for the usual metal [1,2]. The presented here results correspond to the case of undoped material inside the well.…”

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confidence: 56%

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Interaction Between Magnetic Layers in Structures with Narrow-Gap IV-VI Semiconductors

et al. 2000

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The results of calculation of the indirect exchange interaction between magnetic layers are presented for the case of a structure with narrow-gap semiconducting IV-VI quantum well. The main mechanism is a magnetic polarization of the size-quantized electrons and holes inside the well. This type of interaction is suggested for the explanation of recent experiments on EuS/PbS structures. The problem of interaction between magnetic layers separated by a non--magnetic material (metal or semiconductor) is becoming important in connection with the recent advances of microtechnology and a search of new device applications. There is a large number of theoretical papers on the coupling between magnetically ordered layers separated by a non-magnetic metal. Several models have been proposed. Despite of different approaches to the problem, the main idea is a transfer of the magnetic polarization from one magnetic layer to another via free carriers of the non-magnetic metal. In other words, the Ruderman-Kittel-KasuyaYoshida (RKKY) mechanism has been always presented in some form. A review of theoretical works has been given in articles [1][2][3] (see also a discussion in [4]).Here we consider a system consisting of a IV-VI based narrow-gap semiconducting quantum well (QW) between two magnetic layers. An example of such system is a EuS/PbS/EuS sandwich structure. The main peculiarity of this structure is that the electron energy spectrum of the material inside the well is of narrow-gap-semiconducting type with interband coupling which includes strong spin-orbit interaction. The quantization of the energy spectrum in a IV-VI based quantum well has been considered in [5].It was shown in a recent experimental work [6] that in superlattices consisting Of EuS/PbS/EuS layers, a ferrOmagnetic phase transition takes place with the *Present address: Center for Quantum Devices, Northwestern University, Evanston IL 60208, USA.(455)

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confidence: 56%

“…In other words, the Ruderman-Kittel-KasuyaYoshida (RKKY) mechanism has been always presented in some form. A review of theoretical works has been given in articles [1][2][3] (see also a discussion in [4]). …”

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confidence: 99%

Interaction Between Magnetic Layers in Structures with Narrow-Gap IV-VI Semiconductors

et al. 2000

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“…D ue to the l ack of the su£ ci ent numb er of qua si-free charg e carri ers (i n b oth ferro m agneti c and no nm agneti c l ayers), i n al l -semiconducto r m agneti c heterostructur es new m echani sm s of i nterl ayer exchang e coupl i ng a re exp ected to b e e˜ecti ve. In pa rti cul ar, the cano nical R uderm an{ Ki ttel { Ka suya {Y osida (R KKY) coupl i ng vi a qua si-free el ectro ns observed i n m etal l ic m ul ti layers [10] is stro ngl y m odi Ùed i n EuS{ PbS structures due to the l ack of electro ns i n ferro m agneti c EuS l ayer and the tw o-di mensi onal chara cter of el ectro n gas in the PbS qua ntum well [11]. Pa rti cul arl y i mp orta nt for al l -semi conducto r m agneti c mul til ayers are m echanism s requi ri ng no f ree el ectro ns but inv ol ving spin dependent tra nsi ti ons of electro ns fro m the val ence ba nd.…”

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confidence: 99%

Temperature Dependence of Antiferromagnetic Interlayer Exchange Coupling in EuS-PbS Multilayers

et al. 2004

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Semiconductor EuS–PbS ferromagnetic multilayers

Story

2003

Physica Status Solidi (b)

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EuS–PbS ferromagnetic multilayers constitute all‐semiconductor ferromagnetic‐nonmagnetic structures with magnetic layers of EuS (a model nonmetallic ferromagnet) and diamagnetic layers of PbS (IV–VI narrow gap semiconductor compound). The ferromagnetic transition temperature in EuS–PbS multilayers depends on the thickness of the magnetic layer as well as on thermal strain. For ultrathin PbS spacer layers one observes in EuS–PbS–EuS trilayers and superlattices pronounced magnetic effects related to the antiferromagnetic interlayer coupling between ferromagnetic layers of EuS via nonmagnetic semiconductor PbS spacer. These effects are discussed for EuS–PbS structures grown epitaxially on various substrates: insulating KCl(100) and BaF2(111) as well as conducting n‐PbS(100) monocrystals.

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Quantum Size Effects in Ultrathin Layered Magnetic Systems

Cited by 5 publications

References 64 publications

Interaction Between Magnetic Layers in Structures with Narrow-Gap IV-VI Semiconductors

Interaction Between Magnetic Layers in Structures with Narrow-Gap IV-VI Semiconductors

Temperature Dependence of Antiferromagnetic Interlayer Exchange Coupling in EuS-PbS Multilayers

Semiconductor EuS–PbS ferromagnetic multilayers

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