Quantum size effects on photoluminescence from Si nanocrystals in PECVD silicon-rich-oxide

Silicon Quantum Dots for Photovoltaics: A Review

“…The photoluminescence spectra measured at room temperature of these samples show a broad photoluminescence band in the VIS-NIR region, which shifts from 800 to 850 nm for decreasing silicon content. This type of behaviour is reported by numerous studies and only some of them are cited here (Rinnert & Vergnat, 2003;Umezu et al, 2000;Yang et al,1997;Pucker et al, 2000).…”

Optical and optoelectronic properties of Si nanocrystals embedded in dielectric matrix

“…In this thesis, we are focused on the fabrication of silicon nanocrystals embedded in dielectric films, the most promising potential candidate for the application of nc-Si based optoelectronic devices. There are several fabrication techniques to synthesis nc-Si embedded in SiO 2 films including chemical vapor deposition (CVD) [25][26][27][28][29][30][31][32], sputtering [33][34][35], pulse laser deposition (PLD) [36][37][38][39][40], and Si ion implantation into dielectric films [14,[41][42][43]. In this thesis, Si ion implantation followed by high temperature annealing and PECVD are employed to synthesize nc-Si embedded in dielectric films.…”