Quantum State Engineering Based on Electromagnetic Analogies and Numerical Methods for Semiconductor Intersubband Lasers

Abstract

The design of semiconductor intersubband lasers using quantum state engineering based on electromagnetic analogies is a relatively new area. There has been little systematic effort in this direction as yet. The use of these analogies allows laser researchers to apply tools and methodologies found in the mature field of electromagnetic optics. The purpose of this paper is to describe the procedures by which intersubband quantum-well semiconductor lasers (or detectors) may be designed using these methodologies.

Electron-Phonon Interactions in Intersubband Laser Heterostructures

“…All these features of the quasibound states in the leaky window δ can be easily inferred and analyzed from the phase of the electron reflection coefficient. 31,32 Restoring the amplitude of the incoming wave, U − , in the right half-space InAs-layer, the reflection coefficient can be expressed through the function D(ε) from Eq. (3.41)…”