Quantum structures for multiband photon detection

Perera, A. G. U.

doi:10.1117/12.620635

Cited by 2 publications

(2 citation statements)

References 37 publications

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“…Bias-dependent shift of the spectral response is observed due to quantum-confined Stark effect. This spectral diversity can be exploited to realize spectrally smart sensors whose wavelength and bandwidth can be tuned depending on the desired application [44,130,131].…”

Section: Multiband Qdipsmentioning

confidence: 99%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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Third-generation infrared (IR) systems are being developed nowadays. In the common understanding, these systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolour functionality and other on-chip functions. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well photoconductors, have being developed.Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs).In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

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Section: Multiband Qdipsmentioning

confidence: 99%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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“…Heterostructures provide the potential means for solving the far more general problem of controlling fundamental parameters in semiconductor crystals and devices, such as the width of the bandgap, the efective masses and mobilities of charge carriers, the refractive index and the electron energy spectrum. These structures can be used as infrared detectors [10,11], which has immense applications in medical [12], defense [13] and communication [14] ields. Characteristics of these IR devices may be studied from absorption coeicient proile, and thus its accurate determination becomes very important from device design point of view.…”

Section: Introductionmentioning

confidence: 99%

Electronic Band Structure of Quantum Cascade Laser

Deyasi¹

2017

Quantum Cascade Lasers

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Multiple quantum well structure is the subject of theoretical and experimental research over the last two decades due to the possibility of making novel electronic and optoelectronic devices. The phenomenon of resonant tunneling makes it a prime candidate for all tunneling-based quantum devices with one-dimensional coninement. THz laser design using multilayered low-dimensional semiconductor structure is one such example, where miniband formation and its energy diference with lowest quantum state play crucial factor in governing device performance. Quantum cascade laser (QCL) is one of such candidate, which speaks in favor of research using multiple-quantum-well (MQW) structure. In the proposed chapter, transmission coeicient of multiple quantum-well structure is numerically computed using propagation matrix technique, and its density of states is calculated in the presence and absence of electric ield applied along the direction of quantum coninement. Absorption coeicient is also calculated for its possible application as optical emiter/detector. Based on the electronic and photonic properties investigated, electronic band structure of the quantum cascade laser (formed using the MQW structure) is computed. Formation of miniband is tailored with variation of external bias is shown.

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Quantum structures for multiband photon detection

Abstract: The work describes multiband photon detectors based on semiconductor micro-and nano-structures. The

Cited by 2 publications

References 37 publications

New material systems for third generation infrared photodetectors

New material systems for third generation infrared photodetectors

Electronic Band Structure of Quantum Cascade Laser

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