Quantum Theory of the Optical and Electronic Properties of Semiconductors

Haug, H.; Koch, S. W.

doi:10.1142/0936

Cited by 646 publications

(628 citation statements)

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“…These Coulomb collisions come from a binary process in which a photoexcited electron collides with a background carrier, 62,63 and also a collective process in which the photoexcited electron interacts with the thermal plasma of background carriers. 64,65 The energy relaxation of photoexcited electrons due to Coulomb collisions is effective in the X and L valleys but not in the Γ valley. This difference stems from the effective mass as explained in Sec.…”

Section: Physical Picturementioning

confidence: 99%

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

et al. 2013

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Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control over parameters such as doping and lattice temperature is shown to yield high polarization degree, namely larger than 40%, as well as a fine-tuning of the angular momentum of the emitted light with a complete reversal between right-and left-handed circular polarization. By combining the measurement of the optical polarization state of band-edge luminescence and Monte Carlo simulations of carrier dynamics, we show that these very rich and complex phenomena are the result of the electron thermalization and cooling in the multi-valley conduction band of Ge. The circular polarization of the direct-gap radiative recombination is indeed affected by energy relaxation of hot electrons via the X valleys and the Coulomb interaction with extrinsic carriers. Finally, thermal activation of unpolarized L valley electrons accounts for the luminescence depolarization in the high temperature regime.

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Section: Physical Picturementioning

confidence: 99%

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

et al. 2013

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“…Having obtained a model expression for ρ ν (z, t), it is straightforward to obtain S(z, t) using Eqns. (18) and (19).…”

Section: Theorymentioning

confidence: 99%

Femtosecond pump-probe spectroscopy of propagating coherent acoustic phonons inInxGa1−xN∕GaNheterostructures

et al. 2005

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We show that large amplitude, coherent acoustic phonon wavepackets can be generated and detected in InxGa1−xN/GaN epilayers and heterostructures in femtosecond pump-probe differential reflectivity experiments. The amplitude of the coherent phonon increases with increasing Indium fraction x and unlike other coherent phonon oscillations, both amplitude and period are strong functions of the laser probe energy. The amplitude of the oscillation is substantially and almost instantaneously reduced when the wavepacket reaches a GaN-sapphire interface below the surface indicating that the phonon wavepackets are useful for imaging below the surface. A theoretical model is proposed which fits the experiments well and helps to deduce the strength of the phonon wavepackets. Our model shows that localized coherent phonon wavepackets are generated by the femtosecond pump laser in the epilayer near the surface. The wavepackets then propagate through a GaN layer changing the local index of refraction, primarily through the Franz-Keldysh effect, and as a result, modulate the reflectivity of the probe beam. Our model correctly predicts the experimental dependence on probe-wavelength as well as epilayer thickness.

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“…[1], we now want to include some measure of screening in the wavefunction φ k . This is possible by using the Hulthén potential [5][6][7][8][9]12]…”

Section: Hulthén Fundamental Wavefunctionsmentioning

confidence: 99%

“…In the present study however, we are interested in the lowest-lying bound state only. In real space, its eigenfunction reads [8] …”

Section: Hulthén Fundamental Wavefunctionsmentioning

confidence: 99%

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Bosonic behavior of excitons and screening: a consistent calculation

Tanguy

2002

Physics Letters A

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Quantum Theory of the Optical and Electronic Properties of Semiconductors

Cited by 646 publications

References 0 publications

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

Femtosecond pump-probe spectroscopy of propagating coherent acoustic phonons inInxGa1−xN∕GaNheterostructures

Bosonic behavior of excitons and screening: a consistent calculation

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