Quantum transport in accumulation layers on Cd<sub>0.2</sub>Hg<sub>0.8</sub>Te

Singleton, John; Nicholas, R.J.; Nasir, F.; Sarkar, C. K.

doi:10.1088/0022-3719/19/1/010

Cited by 21 publications

(7 citation statements)

References 12 publications

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“…The concentration ratios are in excellent agreement with the theory in [12], the results of Beck and Anderson [7] and the various Singleton, Nicholas and Nasir investigations [1][2][3][4][5][6]. Taking into consideration the composition ratio (x = 0.22), our results indeed fit perfectly with a slight difference between those of x = 0.2 and x = 0.3 [2]. The discrepancy between these data and that of Zhao et al [1] was recently explained [5].…”

Section: Experimental Worksupporting

confidence: 85%

“…The twodimensional sub-bands of this passivation have been thoroughly investigated in recent years. Findings obtained using various magnetoresistence measurements [1][2][3][4][5][6][7] are in good agreement with data obtained from other narrow-gap non-parabolic semiconductor systems, in particular on HgTe and HgTe/CdTe superlattices [8][9][10]. It has been shown both in theory [11,12], as well as experimentally [1,5,6] that narrow-gap non parabolic materials possess common features.…”

Section: Introductionsupporting

confidence: 76%

“…Summing up the S h concentration of the first three sub-bands, and adding 4% for the higher ones [5], w7e came up with the ratio of the sub-bands occupancy to total surface concentration N., presented in Table L. The concentration ratios are in excellent agreement with the theory in [12], the results of Beck and Anderson [7] and the various Singleton, Nicholas and Nasir investigations [1][2][3][4][5][6]. Taking into consideration the composition ratio (x = 0.22), our results indeed fit perfectly with a slight difference between those of x = 0.2 and x = 0.3 [2].…”

Section: Experimental Worksupporting

confidence: 70%

“…Seiler and Becker [14] introduced an AC technique where the magnetic field is modulated and phase sensitive detection is employed. The second derivative of the amplitude presents clear data of SdH oscillations [2,5,6,8,10]. An alternative method is using a metal-insulator-semiconductor (MIS) structure and modulating the gate voltage [1,7,15].…”

Section: Experimental Workmentioning

confidence: 99%

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Surface Electrons in Inverted Layers of p-HgCdTe

Schacham

Finkman

1989

MRS Proc.

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Anodic oxide passivation of p-type HgCdTe generates an inversion layer. Extremely high Hall mobility data for electrons in this layer indicated the presence of a two-dimensional electron gas. This is verified by use of the Shubnikov-de Haas effect from 1.45-4.15K. Data is extracted utilizing a numerical second derivative of DC measurement. Three sub-bands are detected. Their relative occupancies are in excellent agreement with theory and with experimental results obtained on anodic oxide as accumulation layers of n-type HgCdTe. The effective mass derived is comparable to expected.

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Section: Experimental Worksupporting

confidence: 85%

Section: Introductionsupporting

confidence: 76%

Section: Experimental Worksupporting

confidence: 70%

Section: Experimental Workmentioning

confidence: 99%

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Surface Electrons in Inverted Layers of p-HgCdTe

Schacham

Finkman

1989

MRS Proc.

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“…In Table 2 , for an n-accumulation layer with a composit,ion 1: = 0.215 (as case (b) in Table l [7] and [8] the doping level was not given. Instead the bulk electron density a t T = 77 K was mentioned.…”

Section: Resultsmentioning

confidence: 99%

Theory for n‐Surface Charge Layers in Hg_1−xCd_xTe MIS Structures

Zöllner

Paasch

Gobsch

et al. 1988

Physica Status Solidi (b)

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The energy gap of the Hg1−xCdxTe‐system can be controlled by the mole fraction x of Cd. This offers the possibility to use this material as a model system for systematic investigations especially in the narrow‐gap region (corresponding to 0.16 ≦ x ≦ 0.25). The electronic structure, subband occupations, subband energies, and cyclotron masses are calculated for the two‐dimensional electron gas in MIS structures with this material using an approximate self‐consistent method. Both, inversion and accumulation conditions are considered. Comparisons with existing limited theoretical results and with experimental ones a) show the accuracy of the method used and b) allow to interpret the detailed experimental results from Shubnikov‐de Haas and cyclotron measurements available now. Predictions are made on the composition dependence of the electronic structure especially for inversion conditions.

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Self‐Consistent Calculations of Landau Levels for Symmetric p‐Type Inversion Layers

1991

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A b s t r a c t . d method for calculating the Landau levels of symmetric p-type inversion layers is presented. Using the envelope function approach in the Hartree approximation the magnetic field is incorporated into the Hamiltonian. In order to characterize the energy levels and to obtain a detailed understanding of the unusual Landau scheme, an analysis of the wave functions is made. Special effects are discussed for the inversion layers adjacent to the grain boundary of a Ge-bicrystal, with two occupied subbands. The simulation of Shubnikov-de Haas data by a density of states analysis shows that the different oscillatory periods are not directly related to the subband occupations.Selbstkonsistanto Bcrochnungcn von Landau-Niveaus in symmctrischen p-Typ-Invcrsionsrmdschichten I n h a l t s u b c r s i c h t . Es wird eine Methode zur Berechnung des Landau-Schemas in symmetrischen p-Typ-Inversionsrandschichten vorgestellt. Im Formalismus der Envelopefunktionen kann das Magnetfeld vollstiindig in die Hartree-Nlherung eingearbeitet werden. Ein vertieftes VerstLndnis des ungewohnlichen Landau-Schemas wird durch die Analyse der Wellenfunktionen zur Charakterisierung der Energieniveaus erreicht. Am Beispiel eines Ge-Bikristalls werden die Besonderheiten des Landau-Schemas erliiutert, mobei im Inversionskanal entlang der Korngrenze zu-ei elelitrische SubbLnder besetzt sind. Die Simulation von Shubnikov-de Haas-Mellkurven durch die Zustandsdichte zeigt, daB die einzelnen Perioden der Oszillationen nicht unmittelbar den Snbbandbesetzungen zugeordnet werden durfen.

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Quantum transport in accumulation layers on Cd_0.2Hg_0.8Te

Cited by 21 publications

References 12 publications

Surface Electrons in Inverted Layers of p-HgCdTe

Surface Electrons in Inverted Layers of p-HgCdTe

Theory for n‐Surface Charge Layers in Hg_1−xCd_xTe MIS Structures

Self‐Consistent Calculations of Landau Levels for Symmetric p‐Type Inversion Layers

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Quantum transport in accumulation layers on Cd0.2Hg0.8Te

Cited by 21 publications

References 12 publications

Surface Electrons in Inverted Layers of p-HgCdTe

Surface Electrons in Inverted Layers of p-HgCdTe

Theory for n‐Surface Charge Layers in Hg1−xCdxTe MIS Structures

Self‐Consistent Calculations of Landau Levels for Symmetric p‐Type Inversion Layers

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Product

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Quantum transport in accumulation layers on Cd_0.2Hg_0.8Te

Theory for n‐Surface Charge Layers in Hg_1−xCd_xTe MIS Structures