High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov-de Haas oscillations and find a value for the effective g-factor of |𝑔 * | = 35 ± 4 and a value for the effective mass of 𝑚 * ≈ 0.017 𝑚 0 , where 𝑚 0 is the electron mass in vacuum. Our measurements are performed in a magnetic field and a density range where the enhancement mechanism of the effective g-factor can be neglected. Accordingly, the obtained effective g-factor and the effective mass can be quantitatively explained in a single particle picture.Additionally, we explore the magneto-transport up to magnetic fields of 35 T and do not find features related to the fractional quantum Hall effect.
_________________________The narrow-gap III-V binary compound InSb is well known for its combination of a light effective mass, high electron mobility, strong spin-orbit interactions, and a giant effective g-factor in the conduction band [1][2][3][4][5][6]. These unique properties are interesting in a view of potential applications such as high-frequency electronics [7], optoelectronics [8], and spintronics [9]. Especially, it has been suggested that the large effective g-factor of InSb with a bulk value of |g*| ~ 51 could be advantageous for hosting a topologically nontrivial phase through proximity-induced superconductivity [10,11]. The effective g-factor has led to research efforts in nanomaterials and sophisticated nanoconstrictions. In 2-