Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

Ghittorelli, Matteo; Lenz, T.; Dehsari, Hamed Sharifi; Zhao, Dong; Asadi, Kamal; Blom, Paul W. M.; Kovács-Vajna, Zsolt Miklós; Leeuw, Dago M. de; Torricelli, Fabrizio

doi:10.1038/ncomms15841

Cited by 41 publications

(40 citation statements)

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“…The ferroelectric phenomenon can be utilized for nonvolatile memory devices including ferroelectric field effect transistors (FeFET) and ferroelectric random access memory. Ferroelectric memory devices is currently at a very sound stage of development because of its nonvolatility, fast read‐write speeds, low dissipation powers, and high radioactivity tolerances . Solution‐processed ferroelectric polymers including polymer poly(vinylidene fluoride) (PVDF) and PVDF based polymer blends such as PVDF‐PMMA blends, and copolymers of VDF and trifluoroethylene (TrFE) have been of great interest in flexible OFET based ferroelectric memory.…”

Section: Flexible Data Storage Devices Based On Transistor Structurementioning

confidence: 99%

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials

Zhou

Mao

Ren

et al. 2018

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Following the trend of miniaturization as per Moore's law, and facing the strong demand of next-generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high-density storage, high-switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating-gate, charge-trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized.

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Section: Flexible Data Storage Devices Based On Transistor Structurementioning

confidence: 99%

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials

Zhou

Mao

Ren

et al. 2018

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147

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“…There was no apparent formation of a PFO ad-layer. 22,24 We note that the memory diodes also operate if an ad-layer is present provided that its thickness is below 70 nm. 31 The top electrodes were formed as explained previously.…”

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confidence: 95%

“…1(d)], enabling reversible switching of the diode resistance between a non-volatile high-resistance off-state and a low-resistance on-state. 22,23 Two-dimensional (2D) numerical models have quantitatively described the full hysteretic current-voltage (I-V) characteristics of the diodes as a function of both bias and temperature by combining the polarization-voltage response of the ferroelectric polymer with the charge injection and subsequent transport at the metal-organic semiconductor interface. 22,24,25 The model predicts the emergence of an in-plane component for ferroelectric polarization, which causes bending of the electric field lines near the semiconductor phase, as shown by dark-red arrows in Fig.…”

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confidence: 99%

“…1(a), with Au (50 nm)/ PFO:P(VDF-TrFE) (270 6 10 nm)/PEDOT:PSS (70 nm)/Au (70 nm), were prepared according to previously published recipes. 18,22,28,29 The diodes in Fig. 1(a) were realized according to our previously reported works.…”

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confidence: 99%

“…1(a) were realized according to our previously reported works. 22,28 After deposition of the PFO:P(VDF-TrFE) blend film, in order to realize self-aligned etching mask for the gold bottom electrode, PFO columns and domains were selectively etched away using an orthogonal solvent, 17,30 e.g., hot toluene (60 C) overnight. After drying, the substrates were immersed in a diluted solution of KI:I 2 :H 2 O (0.1:0.016 M or 0.05:0.008:27 mol ratio).…”

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Interfacial conduction in organic ferroelectric memory diodes

Dehsari

Kumar

Ghittorelli

et al. 2018

Applied Physics Letters

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Solution-processed memory diodes based on phase separated blends of ferroelectric and semiconducting polymers in the low resistance on-state operate similar to a vertical field-effect transistor at the pinch-off. Numerical simulations have shown that the performance of the diode is dominated by the conduction of charge carriers at the interface between the semiconductor and ferroelectric phases. Here, we present an unambiguous experimental demonstration of the charge injection process in the diodes. We employ a modified diode structure, wherein the electrode in contact with the semiconductor phase has been intentionally removed. Even in the absence of an electrical contact with the semiconductor phase, the diode still shows resistance switching. We provide numerical simulations that reproduce the experimentally measured I-V characteristics and therefore confirm interfacial conduction in the diodes. Furthermore, we discuss the implications of the proposed memory structure particularly in the performance of light-emitting diodes with built-in memory functionality, i.e., MEMOLEDs.

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Charge Transport Advancement in Anti‐Ambipolar Transistors: Spatially Separating Layer Sandwiched between N‐Type Metal Oxides and P‐Type Small Molecules

Han,

Lee,

Kim

et al. 2024

Adv Funct Materials

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Interface issues with organic semiconductors on metal oxide challenge realizing a high‐performance anti‐ambipolar transistor (AAT) with stable operation. The motivation behind this research delves into the intricate landscape of AATs, elucidating their envisioned applications and constituent materials. Central to the authors, discourse is the pivotal role that fluoropolymers assume, acting as a bridge uniting n‐type metal oxide semiconductors (n‐oxide) with p‐type organic semiconductors (p‐organic), thereby unveiling a hitherto concealed facet of transistor advancement. Adopting a spatially separating layer (SSL) between p‐ and n‐type semiconductors of AAT is unconventional, but this p‐organic/SSL/n‐oxide junction (pSn) AAT exhibits stable operation also 215 days after fabrication and minimal hysteresis, which is 13.67 times smaller than a conventional p‐organic/n‐oxide junction (pn) AAT. The effect of SSL is closely studied through comparisons of the performance of single‐type transistors, trap density, and carrier behavior, which define the order of 1/f at low‐frequency noise analysis. In addition, the contribution of SSL is confirmed via the channel formation mechanism of AAT investigated through a two‐dimensional (2D) finite‐element simulation. The operation stability of pSn AAT is evaluated through combined stress tests, long‐term stability tests, and transient response tests. This research proposes SSL as a new design parameter to improve the AAT.

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Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

Cited by 41 publications

References 50 publications

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials

Interfacial conduction in organic ferroelectric memory diodes

Charge Transport Advancement in Anti‐Ambipolar Transistors: Spatially Separating Layer Sandwiched between N‐Type Metal Oxides and P‐Type Small Molecules

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