Quantum well action model for the formation of a single Shockley stacking fault in a 4H-SiC crystal under non-equilibrium conditions

Mannen, Yuina; Shimada, Kana; Asada, Kanta; Ohtani, Noboru

doi:10.1063/1.5074150

Cited by 31 publications

(21 citation statements)

References 35 publications

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“…It is widely accepted that the driving force for SSF expansion is provided by the energy gain due to lowering the crystal energy by the electron capture into SSFs (so-called quantum well action). [6,9,39] Kinks may stop immediately after excitation ending or migrate under this driving force in the opposite directions as shown in Figure 1, if they are mobile for some time after irradiation. In the second case, the PD velocity should depend on the relation between the distance covered by kinks during the pause between successive irradiations (depending on scan rate) and the distances between the neighboring line scans (depending on magnification).…”

Section: Resultsmentioning

confidence: 99%

Kink Migration along 30° Si‐Core Partial Dislocations in 4H‐SiC

Yakimov

2022

Physica Status Solidi (a)

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Single‐layer Shockley‐type stacking fault (SSF) expansion in 4H‐SiC due to irradiation by a focused e‐beam in the scan mode with a different rate and at fixed points has been studied. It is shown that the focused e‐beam enhances the 30° Si‐core partial dislocation glide at room and liquid nitrogen temperatures only at distances smaller than about 10 μm. The dislocations are found to glide as straight lines with a velocity independent of their length even when this length essentially exceeds the size of excitation volume and the diffusion length. The results obtained show that the dislocation velocity under irradiation is mainly determined by the double kink generation rate and allow to conclude that kink migration can occur without any excitation. The kink velocity in 4H‐SiC is estimated for the first time and the lower limit for the kink velocity is of 2 × 10−4 cm s−1 at room temperature and about 2 times smaller at liquid nitrogen temperature that confirming the small activation energy for the kink migration in 4H‐SiC.

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Section: Resultsmentioning

confidence: 99%

Kink Migration along 30° Si‐Core Partial Dislocations in 4H‐SiC

Yakimov

2022

Physica Status Solidi (a)

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“…Bipolar degradation is caused by the expansion of single Shockley stacking faults (1SSFs) from basal plane dislocations (BPDs) in 4H-SiC crystals by a recombination enhanced dislocation glide (REDG). [12][13][14][15][16][17][18][19] Therefore, 4H-SiC power devices can be fabricated without bipolar degradation if the expansion of the BPDs is suppressed to 1SSF. Several suppression methods have been reported for the expansion of BPDs, such as the conversion of BPDs to threading edge dislocations (TEDs).…”

Section: Introductionmentioning

confidence: 99%

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Kato

Watanabe

Mii

et al. 2022

Preprint

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4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar degradation. This degradation is caused by the expansion of single Shockley stacking faults (1SSFs) from basal plane dislocations in the 4H-SiC crystal. Here, we present a method for suppressing the 1SSF expansion by proton implantation on a 4H-SiC epitaxial wafer. PiN diodes fabricated on a proton-implanted wafer show current–voltage characteristics similar to those of PiN diodes without proton implantation. In contrast, the expansion of 1SSFs is effectively suppressed in PiN diodes with proton implantation. Therefore, proton implantation into 4H-SiC epitaxial wafers is an effective method for suppressing bipolar degradation in 4H-SiC power-semiconductor devices while maintaining device performance. This result contributes to the development of highly reliable 4H-SiC devices.

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“…4 Most previous studies on the expansion of 1SSFs have found that the SSFs originate from two kinds of BPDs: one that had penetrated from the substrate into the epilayer, 5,6 and another that had converted to a threading edge dislocation (TED) around the substrate/epilayer interface during epitaxial growth. 7 In addition, many analyses have been conducted of these 1SSFs, including current/temperature stress testing, [8][9][10][11][12][13][14] calculations, [15][16][17][18] and crystal analysis. [19][20][21][22][23] The BPD detection by photoluminescence (PL) imaging and the use of a buffer layer between the substrate and the epitaxial layer was proposed as a method for controlling 1SSF expansion 4,7,11,24 with the aim of solving the V F degradation issue.…”

Section: Introductionmentioning

confidence: 99%

Origin and Generation Process of a Triangular Single Shockley Stacking Fault Expanding from the Surface Side in 4H-SiC PIN Diodes

Ota

Nishio

Okada

et al. 2021

J. Electron. Mater.

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A triangular single Shockley stacking fault (1SSF) in 4H-SiC, expanding from the surface to the substrate/epilayer interface, was investigated. The triangular 1SSF was observed during electroluminescence examination of PIN diodes that had line-andspace anodes with open windows. The threshold current density of the 1SSF expansion was comparatively intermediate, and differed from that of a 1SSF that expanded from a basal plane dislocation (BPD) that had penetrated from the substrate into the epilayer, and from that of a 1SSF that expanded from a BPD that had converted into threading edge dislocations (TEDs) at the substrate/epilayer interface. No BPDs or surface damage such as cracks were observed by photoluminescence imaging, synchrotron x-ray topography imaging, or scanning electron microscope imaging near the origin of the expansion region. High-resolution observation using cross-sectional transmission electron microscopy showed that a partial dislocation (PD) was present on the basal plane and two inclined TEDs were present on both sides of the PD. A g•b analysis showed that this dislocation had a Burgers vector of ± (1/3) [1120], and it was estimated to be a combination of a TED-BPD-TED structure with a short BPD before expansion. Therefore, the triangular 1SSF from the surface side can be explained to have expanded from this BPD. Furthermore, considering the possibility of the BPD-TED conversion at the epitaxial growth process, the TED-BPD-TED dislocation was speculated to have formed after epitaxial growth. The perfect control of the forward voltage degradation of 4H-SiC device is thought to be realized by focusing on this type of BPD.

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Quantum well action model for the formation of a single Shockley stacking fault in a 4H-SiC crystal under non-equilibrium conditions

Cited by 31 publications

References 35 publications

Kink Migration along 30° Si‐Core Partial Dislocations in 4H‐SiC

Kink Migration along 30° Si‐Core Partial Dislocations in 4H‐SiC

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Origin and Generation Process of a Triangular Single Shockley Stacking Fault Expanding from the Surface Side in 4H-SiC PIN Diodes

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