Quantum-Well and Cavity-Mode Resonance Effects in a Vertical-Cavity Surface-Emitting Laser Structure, Observed by Photoreflectance Using Hydrostatic Pressure and Temperature Tuning

Vicente, P.; Thomas, Philippe; Lancefield, D.; Sale, T.E.; Hosea, T. J. C.; Adams, A.R.; Klar, Peter J.; Raymond, André

doi:10.1002/(sici)1521-3951(199901)211:1<255::aid-pssb255>3.0.co;2-w

Cited by 21 publications

(9 citation statements)

References 10 publications

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“…The rate at which the cavity mode changes with temperature is calculated in two ways. First, the ratio of for EEL and VCSEL is assumed to be the same as the ratio [22]. 0.34 meV K for the EEL and is calculated for the VCSEL as 0.079 meV K .…”

Section: Temperature Dependence Measurementsmentioning

confidence: 99%

Investigation of 1.3-μm GaInNAd vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modeling techniques

Knowles

Fehse

Tomić

et al. 2003

IEEE J. Select. Topics Quantum Electron.

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We have investigated the temperature and pressure dependence of the threshold current ( th ) of 1.3 m emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) and the equivalent edge-emitting laser (EEL) devices employing the same active region. Our measurements show that the VCSEL devices have the peak of the gain spectrum on the high-energy side of the cavity mode energy and hence operate over a wide temperature range. They show particularly promising th temperature insensitivity in the 250-350 K range. We have then used a theoretical model based on a 10-band k.P Hamiltonian and experimentally determined recombination coefficients from EELs to calculate the pressure and temperature dependency of th . The results show good agreement between the model and the experimental data, supporting both the validity of the model and the recombination rate parameters. We also show that for both device types, the super-exponential temperature dependency of th at 350 K and above is due largely to Auger recombination.

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Section: Temperature Dependence Measurementsmentioning

confidence: 99%

Investigation of 1.3-μm GaInNAd vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modeling techniques

Knowles

Fehse

Tomić

et al. 2003

IEEE J. Select. Topics Quantum Electron.

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“…[1][2][3] The major challenge in achieving efficient lasing in VCSELs is strongly dependent on the wavelength alignment between the peak of the gain spectrum of the active quantum well (QW) layers and the cavity mode (CM) dip in the reflectance spectrum of the VCSEL Fabry-Perot structure. 4,5 When other effects such as self-heating and non-radiative recombination have been taken into account, achieving an optimized alignment at the desired operating temperature between the energy positions of the QW ground-state transition (E QW ) and the CM dip in the reflectance spectrum (E CM ) should give improved device performance. 6 It is thus critical to know the initial E CM /E QW alignment especially with respect to the temperature performance of devices.…”

Section: Introductionmentioning

confidence: 99%

Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

Chai

Hosea

Fox

et al. 2014

Journal of Applied Physics

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We report angle dependent and temperature dependent (9 K-300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 lm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 6 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices. V C 2014 AIP Publishing LLC.

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“…The major challenge in achieving efficient lasing in VCSELs is strongly dependent on the wavelength alignment between the peak of the gain spectrum of the active quantum well (QW) layers and the cavity mode (CM) of the reflectance spectrum of the VCSEL Fabry-Perot structure. When other effects such as self-heating and non-radiative recombination is taken into account, achieving an optimized alignment at the desired operating temperature (T) between the energy positions of the QW ground-state transition (E QW ) and the CM dip in the reflectance spectrum (E CM ) should give ideal device performance [5,6]. However, even a small E QW -E CM misalignment at the desired operating T causes significant degradation in the threshold current and output power.…”

Section: Introductionmentioning

confidence: 99%

Photoreflectance of a 2.3μm GaInAsSb-based VCSEL structure for gas sensing applications

Chai¹,

Hosea²,

Fox³

et al. 2014

2nd Annual International Conference on Optoelectronics, Photonics &Amp; Applied Physics (OPAP 2014)

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Temperature-dependent photo-modulated reflectance (PR) spectroscopy has been applied to study a GaSb-based vertical-cavity surface-emitting laser (VCSEL) structure designed to operate at 2.3µm. To investigate the wavelength offset between the quantum well (QW) and cavity mode (CM) features, which determine the device's physical properties and temperature performance, the energies of the QW transitions relative to the VCSEL CM energy were tuned by heating from 9K to 300K. We found that this VCSEL structure has a QW-CM offset of 21meV at room temperature; also, the QW ground-state transition only comes into resonance with the CM at 220±2K. These PR results are closely compared with those obtained in a separate study of actual operating devices.

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Quantum-Well and Cavity-Mode Resonance Effects in a Vertical-Cavity Surface-Emitting Laser Structure, Observed by Photoreflectance Using Hydrostatic Pressure and Temperature Tuning

Cited by 21 publications

References 10 publications

Investigation of 1.3-μm GaInNAd vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modeling techniques

Investigation of 1.3-μm GaInNAd vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modeling techniques

Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

Photoreflectance of a 2.3μm GaInAsSb-based VCSEL structure for gas sensing applications

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