Quantum well infrared photodetectors: present and future

Abstract

A review of the III-V Lab activities in the field of quantum well infrared photodetectors (QWIPs) is presented. We discuss the specific advantages of this type of detector and present the production facilities and status. A large section is dedicated to broadband QWIPs for space applications and to QWIPs on InP for mid-wavelength infrared detection. We review the progress of QWIP technology for the next generation (dual band, polarimetric, and multispectral) of thermal imagers. Finally, the state-of-the-art of very long wavelength QWIPs is discussed. C 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). IntroductionAt the III-V Lab, research on quantum well infrared photodetectors (QWIPs) has always been driven by the needs and constraints set by the operational systems. Reliable infrared (IR) cameras for Thales applications need high temperature operation (T FPA > 73 K), low integration time (T INT < 5 ms) to achieve high imaging rates and true microscanning, high instantaneous dynamic range ( + 50 • C) to accurately image objects much hotter than the background. They also need small pitch focal plane arrays (FPAs) (<25 μm) in order to get compact and low cost systems.In this context, parameters such as specific detectivity (D*) or ultimate background limited performance are no more relevant. Moreover, FPA uniformity, stability, peak wavelength reproducibility, and process mastering play an important role. These are reasons why at the III-V Lab, research relies on production facilities.QWIPs have been widely investigated for detection in the mid-wavelength (MW, 3 to 5 μm), long wavelength (LW,8 to

Progress in Infrared Photodetectors Since 2000

“…QWIPs also typically have greater radiation tolerances than narrower band gap materials like MCT and InSb. A case can be made that QWIPs have the greatest ease of material growth of multispectral imagers, as neither lattice mismatching (due to small layer thicknesses) or surface irregularities (due to a lack of nanostructures) are common hindrances for these devices [30,81–83]. …”

“…This can be advantageous if detection of a specific wavelength is required, but is a hindrance for wide band detection [81]. The narrow absorption bands also reduce photogenerated current, and hence the detectivity of QWIPs tends to be much lower than in bulk detectors.…”

Planar Multilayered 2D GeAs Schottky Photodiode for High-Performance Visible–Near-Infrared Photodetection

“…These open new avenues for vital applications, for instance, color imaging, environmental monitoring, optical communication, and optical radar. State-of-the-art infrared and broadband detectors are mostly fabricated by utilizing narrow band gap semiconductors, for instance, HgCdTe alloy, InSb, and quantum nanostructures developed on group III–V materials. , However, these materials are still facing major challenges such as growth difficulties (lattice mismatch), , advanced fabrication processes requirements, and low operation temperatures which limit their wide applications. Therefore, exploring new materials with excellent optoelectronic properties for broadband wavelength detection range spanning the ultraviolet (UV), visible (vis), and near-infrared (NIR) ranges of the electromagnetic spectrum are of great interest for a vast range of optoelectronic devices.…”

Selectivity in trace gas sensing: recent developments, challenges, and future perspectives

“…172 In these spectroscopic techniques, several advanced mid-IR laser sources were used such as quantum cascade lasers (QCL, ∼4–10 μm), inter-band cascade lasers (ICL, ∼3–6 μm), vertical-cavity surface-emitting lasers (VCSEL, 1–3 μm), as well as several advanced detectors, were employed, e.g. , quantum heterostructure detector, 173–176 avalanche photodiode (APD), 177,178 new types of gas cells. 179–184 Therefore, the sensitivity and selectivity depend on the quality of the sources and detectors indirectly.…”