Quantum well lasers--Gain, spectra, dynamics

Arakawa, Yasuhiko; Yariv, Amnon

doi:10.1109/jqe.1986.1073185

Cited by 562 publications

(170 citation statements)

References 82 publications

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“…These are ideal characteristics for signal processing. 2 Despite expectation, based on theoretical calculations about the superior properties of the QWR structures, current technology limits the possible methods for the realization of QWR. Patterning by means of e-beam lithography and subsequent etching is the most direct way.…”

Section: Introductionmentioning

confidence: 99%

Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate

Kim

Yuan

León

et al. 1996

Journal of Applied Physics

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Structural and optical characterization of InAs/InGaAs self-assembled quantum dots grown on (311)B GaAs J. Appl. Phys. 80, 3466 (1996); 10.1063/1.363216 (110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T-shaped quantum wires Appl. Phys. Lett. 69, 800 (1996) Effects of anodic oxide induced intermixing on the structural and optical properties of stacked GaAs quantum wire ͑QWR͒ structures grown on a sawtooth-type nonplanar GaAs substrate are investigated. Cross-sectional transmission electron microscope ͑XTEM͒ observation, temperature dependent photoluminescence ͑PL͒ and cathodoluminescence ͑CL͒ imaging were used. Intermixing was achieved by pulsed anodic oxidation of the GaAs cap layer and subsequent rapid thermal annealing, was verified by XTEM analysis. A significant enhancement of QWR PL is observed accompanied by a notable blueshift of the sidewall quantum well ͑SQWL͒ PL due to the intermixing. Furthermore, an extended necking region is observed after the intermixing by spatially resolved CL. The temperature dependence of the PL intensities of both SQWL and QWR show maxima at approximately Tϳ110 K indicating the role of the extended necking region in feeding carriers to SQWL and QWR.

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Section: Introductionmentioning

confidence: 99%

Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate

Kim

Yuan

León

et al. 1996

Journal of Applied Physics

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“…[1][2][3] The optical properties of such islands have been mainly studied by incoherent methods. [4][5][6][7] Driven by the search for blue-green-emitting semiconductor materials, the fabrication [8][9][10][11][12][13] and optical characterization [14][15][16][17][18] of self-assembled II-VI islands have recently been the subject of intensive research.…”

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Exciton dephasing and biexciton binding in CdSe/ZnSe islands

et al. 1999

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“…Согласно теоретическим исследованиям [47,48], эффективного сни-жения плотности состояний и изменения положения уровня Ферми для дырок можно достичь за счет модулированного легирования активной области акцепторной примесью. Однако эксперименты показали, что, несмотря на существенное (∼ 50%) падение коэффициента нелиней-ности усиления, наблюдается только относительно слабое (15%) уве-личение дифференциального усиления активной области напряженных квантовых ям InGaAs [43].…”

Section: дифференциальное усиление активной областиunclassified

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called “vertical-cavity surface-emitting lasers”) under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ∼30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

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Quantum well lasers--Gain, spectra, dynamics

Cited by 562 publications

References 82 publications

Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate

Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate

Exciton dephasing and biexciton binding in CdSe/ZnSe islands

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

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