Quantum well lasers with carbon doped cladding layers grown by solid source molecular beam epitaxy

Abstract

Data are presented which demonstrate that very high quality carbon (C) doped epilayers for the fabrication of AlGaAs-GaAs and AlGaAs-GaAs-InGaAs quantum well (QW) lasers can be grown by solid source molecular beam epitaxy (MBE) using a resistively heated graphite filament as a p-type dopant source. Broad area lasers fabricated from this material exhibit very low threshold current densities (66 A/cm2 for a 2-mm-long single QW AlGaAs-GaAs-InGaAs laser emitting at 980-nm wavelength). It is also shown that lasers with carbon doped cladding layers grown on either n+ or p+ substrates exhibit similar low threshold current densities. These C-doped lasers are expected to have improved long term reliability compared to conventional Be-doped laser structures.

InGaAs/GaAs/AlGaAs GRIN-SCH quantum-well lasers grown by solid-source molecular-beam epitaxy using CBr4 doping

“…10 Our results are comparable to the best values obtained for comparable device structures ͑without any growth interruptions͒ of which we are aware: 45 A/cm 2 for beryllium-doped lasers, 11 66 A/cm 2 for carbon-doped lasers. 5 Our carbon-and beryllium-doped lasers with cladding layers grown at low substrate temperatures exhibited threshold current densities which were nearly as low. We obtained a threshold current density of 91 A/cm 2 for carbon-doped devices grown at 570°C.…”

“…Although carbon doped ϳ980 nm lasers have been grown previously by metal-organic chemical vapor deposition ͑MOCVD͒ using carbon tetrachloride 4 or by solid-source MBE using a heated graphite filament, [5][6][7] there is only one recent report of which we are aware of such lasers grown by MBE using CBr 4 . 8 Carbon doping eliminates concerns over dopant diffusion which accompany the use of Be particularly at elevated substrate temperatures or high doping levels.…”

A review of InP/InAlAs/InGaAs based transistors for high frequency applications

“…The n-type dopants for GaAs semiconductor are Sn [94,95], Se [96], S [97] and for InP the n-type dopants are Sn [98,99]. The p-type dopants for GaAs are Ge [100] and C [101] and for InP the p-type dopants are Be [102], and Zn [103]. Tellurium (Te) [104] have been used as an n-type impurity in InAs semiconductor.…”

High-efficient carbon-doped InGaAs/AlGaAs/GaAs quantum well lasers

“…lasers with C-doped cladding was realized by solidsource molecular beam epitaxy [11]. High-power C-doped laser diodes (l=980 nm) using carbon tetrachloride (CCl 4 ) as precursor by MOCVD has been reported [12].…”