2018
DOI: 10.1103/physrevb.97.195430
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Quantum-well states in thin Ag films grown on the Ga/Si(111)- 3×3 surface

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Cited by 14 publications
(4 citation statements)
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“…Following a two-step process (i.e., deposition at low temperature ∼ 100 K followed by annealing to 300 K), we find the lowest thickness needed to produce atomically flat films using this procedure to be 6 ML. Nevertheless, 2ML Ag(111) films have been recently reported by employing a Ga/Si buffer layer [54], showing rather flat surfaces and well-defined quantum-well states [55]. In our films, the crystalline quality of the fabricated Ag(111) films, which exhibit a clean electronic band structure consisting of quantized QWs, combined with the crystalline quality of the substrate, permit ruling out inelastic electron-and plasmon-scattering due to imperfections.…”
Section: Discussionmentioning
confidence: 81%
“…Following a two-step process (i.e., deposition at low temperature ∼ 100 K followed by annealing to 300 K), we find the lowest thickness needed to produce atomically flat films using this procedure to be 6 ML. Nevertheless, 2ML Ag(111) films have been recently reported by employing a Ga/Si buffer layer [54], showing rather flat surfaces and well-defined quantum-well states [55]. In our films, the crystalline quality of the fabricated Ag(111) films, which exhibit a clean electronic band structure consisting of quantized QWs, combined with the crystalline quality of the substrate, permit ruling out inelastic electron-and plasmon-scattering due to imperfections.…”
Section: Discussionmentioning
confidence: 81%
“…[15][16][17][18][19] Over the past decades, countless efforts have been invested in generating different types QWSs devices and improving their qualities. The QWSs are generally obtained in thin film structure especially in metallic thin films (such as Bi, 20,21 Pb, 22,23 Ag, 24 Cu, 25 Fe, 26 etc. ), transition metal dichalcogenides/oxides films such as MoS2 27,28 and SrVO3 29 as well as in thin-film heterostructures (i.e., SrTiO3/LaAlO3 30 ).…”
mentioning
confidence: 99%
“…-Sn leads to the formation of ordered Ag films at room temperature, and their thickness may be less than 5 ML [15][16][17].…”
Section: Introductionmentioning
confidence: 99%