2021 IEEE International Conference on Design &Amp; Test of Integrated Micro &Amp; Nano-Systems (DTS) 2021
DOI: 10.1109/dts52014.2021.9498223
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Quantum well width and barrier Thickness effects on the perpendicular transport in polar and non-polar oriented AlGaN/GaN Resonant Tunneling Diodes

Abstract: In this study, we theoretically investigated the electronic properties of resonant tunneling diodes (RTDs) grown along the polar and non-polar orientations by using the self-consistent solution of the coupled Schrödinger and Poisson equations. Based on the transfer matrix formalism, the effects of the geometrical parameters on the current-voltage characteristics of Al0.2Ga0.8N/GaN RTDs we analyzed by varying GaN well width and Al0.2Ga0.8N/GaN barrier thicknesses. The results show that the characteristics of po… Show more

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