Quantum Yield of a Silicon Avalanche Photodiode in the Wavelength Range of 120–170 nm

Аруев, П. Н.; Belik, V. P.; Забродский, В. В.; Kruglov, E. M.; Николаев, А. В.; Сахаров, В. И.; Serenkov, I. T.; Филимонов, В. В.; Sherstnev, E. V.

doi:10.1134/s1063784220080022

Cited by 4 publications

(7 citation statements)

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“…It is notable that in the case of the full spectrum of VUV light, the dielectric, anti-reflection coatings method is unacceptable, since most dielectrics actively absorb VUV light at wavelengths of <125 nm, 3,6 which will inevitably lead to a decrease in Ɛ. The previous ASPD 6 was a p þþ -π-p-n þþ silicon, reach-through, avalanche photodiode. This ASPD was made on a float zone, with [100] orientation from an 8 to 10 kohm-cm silicon material, with a thickness of π-region ∼320 μm.…”

Section: Improved Aspdmentioning

confidence: 99%

“…6 were used. Figure 1 shows the difference between the structures of the previous ASPD version 6 and an improved version, ASPD irradiation modes, as well as the difference between the wavelengths used in Ref. 6 and in this paper.…”

Section: Improved Aspdmentioning

confidence: 99%

“…Figure 1 shows the difference between the structures of the previous ASPD version 6 and an improved version, ASPD irradiation modes, as well as the difference between the wavelengths used in Ref. 6 and in this paper. To exclude thermal influence while taking measurements, the ASPD's TO-5 package was used, with a high thermal contact to an aluminum thermal capacitor of 1.4 kJ∕K.…”

Section: Improved Aspdmentioning

confidence: 99%

“…6 and 7, and Ɛ ASPD was more than five times higher than that recorded using the first ASPD. 6 A set of quasi-constant spectral dependences and Ɛ ASPD superior to 0.65 electrons∕photon, is very convenient from a metrological point of view. Ɛ ASPD < 1 electrons∕photon may indicate that increasing the effective detector dead layer is essential, due to an abnormal VUV incidence angle in the case of a textured active area surface.…”

Section: Dark Current and External Quantum Yield At 116 Nmmentioning

confidence: 99%

“…The task of designing a detector with an internal gain and with a photon detection efficiency (Ɛ) superior to 0.5 electrons∕photon in the full spectrum of VUV radiation, has yet to be achieved. Our previous paper 6 presented an avalanche silicon precision detector (ASPD). This paper showed that Ɛ ASPD (ASPD photon detection efficiency) in the 120-to 170-nm spectral range, was around 0.13 electrons∕photon.…”

Section: Introductionmentioning

confidence: 99%

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Silicon avalanche photodiode with photon detection efficiency superior to 0.65 electrons/photon in the wavelength range of 114 to 170 nm

et al. 2021

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We have designed a silicon detector based on an avalanche photodiode for detecting vacuum ultraviolet radiation. It was demonstrated that the detector has a photon detection efficiency superior to 0.65 electrons∕photon, in the wavelength range from 114 to 170 nm, with an external quantum yield from 49 to 7000 electrons∕photon at a reverse-bias voltage from 190 to 315 V, respectively. The detector's active area diameter is 1.5 mm. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Improved Aspdmentioning

confidence: 99%

Section: Improved Aspdmentioning

confidence: 99%

Section: Improved Aspdmentioning

confidence: 99%

Section: Dark Current and External Quantum Yield At 116 Nmmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Silicon avalanche photodiode with photon detection efficiency superior to 0.65 electrons/photon in the wavelength range of 114 to 170 nm

et al. 2021

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The research on linear gain of silicon avalanche photodetectors

Niu,

Peng,

Zhao

et al. 2023

Optoelectronic Devices and Integration XII

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To meet the requirements of high dynamic range applications of LiDAR, this paper designs the silicon avalanche photodetector (Si APD) with large linear gain, which can reduce the difficulty of subsequent APD circuits and improve the accuracy of laser ranging. In this paper, a planar n + -p-π-p + avalanche photodetector (APD) is formed by ion implantation and annealing process, based on a silicon intrinsic substrate wafer. And the device structure is optimized to improve the maximum gain value in linear mode. Based on this, a new trench with an ion implantation type guard ring is designed to enhance the linear gain range. The simulation results show that the device operates in the wavelength range of 400~1100 nm and reaches the peak response at 700 nm. The breakdown voltage is 153 V, and the dark current at 90% breakdown voltage is 1.47 nA. The gain range is 2~101 under 32~138 V bias, with a large gain dynamic range and good linearity of gain, which is beneficial for the subsequent amplification circuit. Meanwhile, the calculation shows that the input optical power of APD device corresponding to the optical current compression degree of -1 dB is -16 dBm, which has good linearity in the range of -70~-16 dBm, which is beneficial to improve the overall performance of LIDAR.

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Quantum Yield of an Avalanche Silicon Photodiode in the 114–170 and 210–1100 nm Wavelength Ranges

Aruev,

Belik,

Blokhin

et al. 2023

Tech. Phys. Lett.

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Quantum Yield of a Silicon Avalanche Photodiode in the Wavelength Range of 120–170 nm

Cited by 4 publications

References 10 publications

Silicon avalanche photodiode with photon detection efficiency superior to 0.65 electrons/photon in the wavelength range of 114 to 170 nm

Silicon avalanche photodiode with photon detection efficiency superior to 0.65 electrons/photon in the wavelength range of 114 to 170 nm

The research on linear gain of silicon avalanche photodetectors

Quantum Yield of an Avalanche Silicon Photodiode in the 114–170 and 210–1100 nm Wavelength Ranges

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