Quarter-wave Bragg reflector stack of InP-In0.53Ga0.47As for 1.65 μm wavelength

Deppe, D. G.; Gerrard, Neil D.; Pinzone, C. J.; Dupuis, R. D.; Schubert, E. Fred

doi:10.1063/1.102814

Cited by 24 publications

(12 citation statements)

References 17 publications

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“…It is interesting to note that a similar effect in the Moss-Burstein shift has been observed by Deppe et al 29 in highly doped bulk In 0.53 Ga 0.47 As layers. For p-type doping no appreciatable Moss-Burstein shift was found, while in n-type layers a significant shift was observed.…”

Section: B Numerical Results and Discussionsupporting

confidence: 82%

Effect of strain on a second-order van Hove singularity inAlxGa1
Kemerink
¹
,
Koenraad
²

1996
Phys. Rev. B

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We have performed low-temperature photoluminescence and photoluminescence excitation ͑PLE͒ measurements on highly degenerate p-type GaAs and In y Ga 1Ϫy As quantum wells. In the PLE spectrum of the GaAs well, evidence of a second-order van Hove singularity in the joint density of states of the ground-state light-hole and electron bands is found. This singularity results from the equality of ground-state light-hole and electron effective masses near the ⌫ point, being a much more restrictive demand than the usual condition for a van Hove singularity, which requires only the equality of first derivatives of the subband dispersions. The second-order van Hove singularity gives rise to a power-law divergence at the singular point, whereas the corresponding usual van Hove singularity results in a steplike discontinuity in the joint density of states. The observed singularity could be described extremely well by a simple analytical model. The increased energy gap between light-and heavy-hole ground states in the compressively strained In y Ga 1Ϫy As well enhances the valence-band parabolicity, resulting in the disappearance of the van Hove singularity. Furthermore, it is shown that the anisotropic character of the heavy-hole ground state in GaAs is strongly suppressed in the In y Ga 1Ϫy As system. All experiments are in good agreement with our numerical modeling, based on an exact solution of the 4ϫ4 Luttinger Hamiltonian.

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Section: B Numerical Results and Discussionsupporting

confidence: 82%

Effect of strain on a second-order van Hove singularity inAlxGa1
Kemerink
¹
,
Koenraad
²

1996
Phys. Rev. B

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“…The calculated separation between Fermi level and the top of the valence band for intercalated samples reaches B1 eV, consistent with our experimental observation. Unlike previous studies 33,34 with small shifts in a very narrow energy range by regular doping, the ultra-large shift due to Cu intercalation here enables dramatic optical property change over a large wavelength range, thus makes such a material system suitable for applications that require substantial optical property tuning. Figure 4a shows the refractive indices obtained from the experimental data.…”

Section: Resultsmentioning

confidence: 89%

Optical transmission enhacement through chemically tuned two-dimensional bismuth chalcogenide nanoplates

et al. 2014

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Layer-structured two-dimensional nanomaterials are a family of materials with strong covalent bonding within layers and weak van der Waals interaction between layers, whose vertical thickness can be thinned down to few nanometer and even single atomic layer. Bismuth chalcogenides are examples of such two-dimensional materials. Here, we present our discovery of significant enhancement of light transmission through thin nanoplates of layered bismuth chalcogenides by intercalation of copper atoms, which is on the contrary to most bulk materials in which doping reduces the light transmission. This surprising behaviour results from two mechanisms: chemical tuning effect of substantial reduction of material absorption after intercalation and nanophotonic effect of zero-wave anti-reflection unique to ultra-small thickness of nanoplates. We demonstrate that the synergy of these two effects in two-dimensional nanostructures can be exploited for various optoelectronic applications including transparent electrode. The intercalation mechanism allows potential dynamic tuning capability.

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“…This is reasonable since a rigid shift of the absorption edge with doping can be expected in materials where band filling occurs, especially at low temperatures, and such shifts have been observed, for example, in n-GaAs 40 and n-InGaAs. 41 This new model, which includes reabsorption, was applied to the experimental PL measurements of sample S5. The Fermi level (E F ϪE c ) was fixed to the value calculated from the Hall carrier concentration, i.e., 97 meV at RT and 104 meV at LT.…”

Section: A Reabsorption Effects On the Photoluminescence Spectramentioning

confidence: 99%

Reabsorption, band-gap narrowing, and the reconciliation of photoluminescence spectra with electrical measurements for epitaxial n-InP

Sieg

Ringel

1996

Journal of Applied Physics

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The effects of reabsorption and band-gap narrowing (BGN) on experimental photoluminescence (PL) spectra of n-InP grown by metalorganic chemical vapor deposition are analyzed. PL spectra show a pronounced widening of the main PL peak and a shift of that peak to higher photon energy with increasing doping due to band filling. However, the magnitude of these effects, both here and in earlier studies of n-type III–V semiconductors, is smaller than expected based upon band filling calculations and electrical measurements. Various explanations for these discrepancies between PL spectra and band filling calculations have been proposed, but little experimental support is currently available. In this article we demonstrate unambiguously that both the n-InP PL peak width and the peak position are significantly reduced by reabsorption, and that reabsorption completely explains the observed discrepancy between the measured PL peak width and the calculated band filling based on electrical measurements. In particular, we show that reabsorption must be accounted for when extracting the Fermi level from experimental n-InP PL spectra, otherwise the Fermi level value is severely underestimated. Since previous studies of the n-InP PL line shape have neglected reabsorption and instead attributed the unexpectedly low extracted Fermi level value to band-gap narrowing effects, we reinvestigate BGN in n-InP by considering only the low-energy tail of the PL spectra. The extent of the low-energy band tail below the intrinsic band-gap energy is observed to be only about half as large as n-InP BGN predicted theoretically. Very similar results have been reported in the literature for n-GaAs and is either due to an overestimation of the BGN by theory or a failure of PL to reflect the full extent of a highly nonrigid BGN shift. In regard to the latter, we demonstrate that a highly nonrigid BGN shift does indeed exist for n-InP, with the BGN shift near zone center being at least three times larger than the energy shift of states near the Fermi surface for n=4×1018 cm−3.

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Quarter-wave Bragg reflector stack of InP-In0.53Ga0.47As for 1.65 μm wavelength

Cited by 24 publications

References 17 publications

Effect of strain on a second-order van Hove singularity inAlxGa1
Kemerink
¹
,
Koenraad
²

1996
Phys. Rev. B

Effect of strain on a second-order van Hove singularity inAlxGa1
Kemerink
¹
,
Koenraad
²

1996
Phys. Rev. B

Optical transmission enhacement through chemically tuned two-dimensional bismuth chalcogenide nanoplates

Reabsorption, band-gap narrowing, and the reconciliation of photoluminescence spectra with electrical measurements for epitaxial n-InP

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Quarter-wave Bragg reflector stack of InP-In0.53Ga0.47As for 1.65 μm wavelength

Cited by 24 publications

References 17 publications

Effect of strain on a second-order van Hove singularity inAlxGa1Kemerink1, Koenraad2 1996Phys. Rev. B

Effect of strain on a second-order van Hove singularity inAlxGa1Kemerink1, Koenraad2 1996Phys. Rev. B

Optical transmission enhacement through chemically tuned two-dimensional bismuth chalcogenide nanoplates

Reabsorption, band-gap narrowing, and the reconciliation of photoluminescence spectra with electrical measurements for epitaxial n-InP

Contact Info

Product

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About

Effect of strain on a second-order van Hove singularity inAlxGa1
Kemerink
¹
,
Koenraad
²

1996
Phys. Rev. B

Effect of strain on a second-order van Hove singularity inAlxGa1
Kemerink
¹
,
Koenraad
²

1996
Phys. Rev. B