Quasi-donor-acceptor pair transitions in GaAsSb and AlGaAsSb on InP

Filho, D. O. Toginho; Dias, Ivan Frederico Lupiano; Laureto, Édson; Duarte, José Leonil; Lourenço, Sidney Alves; Poças, Luiz Carlos; Prabhu, S. S.; Klem, John F.

doi:10.1063/1.1923588

Cited by 18 publications

(19 citation statements)

References 42 publications

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“…Both the temperature dependence of the PL peak wavelength and emission intensity are consistent with recombination through localized band tail states arising from electrostatic potential fluctuations due to compositional inhomogeneities in these alloys. 10,13 This is not surprising since the alloys produced are close to the boundary of the miscibility gap in this system. Our findings are similar to those for quaternary AlGaAsSb lattice matched to InP, where compositional modulation ͑ϳ15 nm͒ could only be observed using high resolution transmission electron microscopy.…”

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confidence: 99%

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Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy

Krier

Smirnov

Batty

et al. 2007

Applied Physics Letters

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Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4 m. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2768892͔Continuing interest in the development of III-V materials for use in midinfrared ͑2-5 m͒ light sources and detectors is driven by the extensive range of potential applications in this spectral region, including environmental gas monitoring, noninvasive medical diagnosis, tunable IR spectroscopy, and free space optical communications. 1 The pentanary alloys, such as GaInAsSbP, offer some useful advantages to the device engineer by making available an additional degree of freedom. 2,3 For a given value of the band gap or lattice constant, properties, such as the refractive index, spin-orbit valence band splitting, band offsets, etc., can be independently varied. This could enable control of optical confinement, carrier leakage, intervalence band absorption, and Auger recombination. However, there have been very few reports on the growth and the luminescence properties of GaInAsSbP pentanary alloys. 3,4 Recently, however, AlGaInAsSb alloys have been grown by molecular beam epitaxy and effectively used as the barrier layers in room temperature midinfrared quantum well lasers. 5 Here we report on the liquid phase epitaxial growth of GaInAsSbP pentanary alloys and demonstrate room temperature photoluminescence ͑PL͒ in the 3 -4 m spectral range.Epitaxial growth of pentanary GaInAsPSb single epilayers was carried out from antimony-rich melts onto Ge doped p-type GaSb ͑100͒ substrates. Growth melts were prepared from 6N Sb and 7N In pure metals, while the sources of Ga, As, and P were undoped polycrystalline GaSb, InAs, and InP binary compounds. The use of antimony as the solvent for liquid phase epitaxy ͑LPE͒ growth of GaSb-related alloys has some advantages because it avoids substrate erosion and reduces the formation of Sb vacancies. 6-8 Growth was implemented from supercooled melts at temperatures within the interval of 585-600°C. In each case before the deposition of the GaInAsPSb pentanary alloy an undoped GaSb p-type buffer layer was grown on the substrate. Structural characterization of the resulting epitaxial layers was done using phase contrast Nomarski microscopy, field emission electron microscopy, and high resolution x-ray diffraction. Subsequent optical investigation of the GaInAsSbP structures included PL spectroscopy using an Ar + ion laser ͑514 nm͒ which produced an excitation power density of 20 W cm −2 on the sample. Temperature dependent PL measurements over the range of 4 -300 K were carried out using conventional lock-in techniques. Additional measurements were made with a Bruker IFS 66/S Fourier transform infrared spectrometer and a 77 K InSb photodiod...

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“…The resulting curve is characteristic of recombination through localized states and has been previously observed in AlGaAsSb alloys and AlAs/ GaAs disordered superlattices. 7,10 Extrapolation of Eq. ͑1͒ to low temperature gives a value of 5 meV for the localization energy.…”

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confidence: 99%

Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy

Krier

Smirnov

Batty

et al. 2007

Applied Physics Letters

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“…We attribute the temperature dependence of the PL and the improved electroluminescence to recombination from localized states arising from electrostatic potential fluctuations due to compositional inhomogeneities in these alloys. 12 With increasing temperature these transitions give way to free-tobound transitions. We associate the localization with spinodal decomposition of the pentanary alloy, even though the surfaces of the epilayers were featureless when examined using the Nomarski microscope and x-ray diffraction spectra also revealed no evidence of compositional inhomogeneities.…”

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confidence: 99%

“…11 The temperature dependence of the band gap and the PL intensity followed closely that obtained in the literature for AlGaAsSb quaternary alloys containing compositional inhomogeneity due to phase separation. 12 In this case variation in the alloy composition produces fluctuation of the electrostatic potential and results in radiative transitions from localized states near the band edges. The competition between band-band recombination and that from the localized levels leads to the observed spectral behavior.…”

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confidence: 99%

Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes

Krier

Smirnov

Batty

et al. 2007

Applied Physics Letters

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Room temperature electroluminescence in the midinfrared near 4 m is reported from GaInAsSbP light emitting diodes grown on GaSb by liquid phase epitaxy. Comparison of the electro-and photoluminescence revealed that light is generated on the p side of the diode. The energy shift ͑24 meV͒ is consistent with band gap narrowing and recombination via band tail states due to the Zn doping ͑1 ϫ 10 18 cm −3 ͒ in the p layer of the structure. The temperature dependent behavior of the luminescence and the improved emission intensity was attributed to recombination from localized states arising from electrostatic potential fluctuations due to compositional inhomogeneities in these alloys. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2741147͔The realization of high emittance light emitting diodes ͑LEDs͒ and lasers for the midinfrared ͑2-5 m͒ spectral range, which can work efficiently at room temperature, is hampered by competing nonradiative Auger recombination and intervalence band absorption ͑IVBA͒. 1 This leads to poor internal efficiency in LEDs and high threshold currents in diode lasers. If suitable optoelectronic components could be made available one can envisage a wide variety of applications, including chemical process control, environmental monitoring of atmospheric pollution, and free space optical communications. One promising approach is to use the GaInAsPSb pentanary alloys because for a given value of the band gap ͑or lattice constant͒ properties such as the refractive index, spin-orbit valence band splitting ͑⌬ so ͒, or thermal expansion coefficient can be independently varied. 2,3 This offers a different approach to control optical confinement, carrier leakage, IVBA, and Auger recombination. However, although GaInAsPSb alloys have been grown, there has been very little work in this area. 4,5 Luminescence emission properties of broken gap GaInAsSbP / InAs isotype heterostructures and prototype light emitting diodes and photodiodes at short wavelengths ͑ Ͻ4 m͒ have been reported for alloys grown by liquid phase epitaxy ͑LPE͒ lattice matched onto InAs. 6,7 Recently, AlGaInAsSb alloys grown by molecular beam epitaxy have been effectively used as the barrier layers in room temperature midinfrared quantum well lasers. 8 In this letter the epitaxial growth of GaInAsPSb/ GaSb p-i-n structures from the liquid phase and a study of their electroluminescence properties are presented.Epitaxial growth of Ga 1−x In x As y P z Sb l-y-z single epilayers as well as p-i-n homostructures in which p-type layers were doped with Zn ͑1 ϫ 10 18 cm −3 ͒ and n-type layers were doped with Te ͑4 ϫ 10 17 cm −3 ͒ was carried out from antimony-rich melts onto Ge doped p-type GaSb ͑100͒ substrates. The use of antimony as the solvent for LPE growth of GaSb-related alloys has some advantages 9,10 compared with the more conventional techniques based on the low melting point metals, using In or Ga as solvents, namely, ͑1͒ Growth from Sb solution decreases the concentration of stoichiometric defects such as V Ga +Ga Sb , ͑2͒ etchback ...

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“…The energy variation of main PL peaks with the increase on the excitation intensity at 10 K in all samples shows a blue-shift with an average shift of ~3.0 meV/decade. This shift is associated to DAP (Donor-AcceptorPair) or to QDAP (Quasi-Donor-Acceptor-Pair) transitions usually observed in bulk samples from antimony family alloys (TOGINHO FILHO, 2005a). The dependence of the Full Width Half Maximum (FWHM) with temperature are presented in Figure 2.…”

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confidence: 99%

A infuência de diferentes interfaces nas características elétricas e ópticas de Espelhos de Bragg de ALGaAsSB/ALAsSB dopados com Te, sobre InP.

et al. 2008

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The electrical and optical properties of non-doped and Te doped 6.5 periods AlGaAsSb/AlAsSb Bragg mirrors on InP grown by MBE with different types of interfaces between ternary and quaternary layers are reported. The techniques employed were photoluminescence, reflectivity and IxV measurements. The digital alloy gradient interface seems to be the best alternative to optimize conduction without significant reflectivity losses. Key words: Semiconductor. Bragg mirror. AlGaAsSb. AlAsSb. ResumoSão apresentadas as propriedades elétricas e ópticas de espelhos de Bragg com 6.5 períodos de AlGaAsSb/ AlAsSb não dopado e dopados com Te, sobre InP, crescidos por MBE com diferentes tipos de interface entre as camadas de material ternário e quaternário. As técnicas empregadas foram fotoluminescência, reflectividade e medições de IxV. A interface com liga digital em gradiente parece ser a melhor alternativa para otimizar condução elétrica sem perdas significativas da refletividade. Palavras-chave: Semicondutor. Espelhos de Bragg. AlGaAsSb. AlAsSb.

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Quasi-donor-acceptor pair transitions in GaAsSb and AlGaAsSb on InP

Cited by 18 publications

References 42 publications

Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy

Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy

Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes

A infuência de diferentes interfaces nas características elétricas e ópticas de Espelhos de Bragg de ALGaAsSB/ALAsSB dopados com Te, sobre InP.

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