Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

Meng, Siqin; Yue, Zhenxing; Zhang, Xiaozhi; Li, Longtu

doi:10.1016/j.apsusc.2013.11.079

Cited by 6 publications

(3 citation statements)

References 22 publications

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“…An α‐Fe 2 O 3 secondary phase was also detected in these samples owing to its much lower crystallization temperature and higher thermodynamic stability than BaM . Previous studies have shown that the α‐Fe 2 O 3 phase plays a critical role in the orientation growth of the BaM films . In contrast, the film deposited without oxygen addition shows low

(h 0 \bar{h} 0)

peak intensities, suggesting very low levels of in‐plane orientation.…”

Section: Resultsmentioning

confidence: 85%

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Orientation Growth and Magnetic Properties of BaM Hexaferrite Films Deposited by Direct Current Magnetron Sputtering

Zhang

Yue

2015

J. Am. Ceram. Soc.

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In‐plane c‐axis oriented Ba‐hexaferrite (BaM) thin films were prepared on a‐plane (112¯0) sapphire (Al2O3) substrates using direct current (DC) magnetron sputtering followed by ex‐situ annealing. The sputtering atmosphere was found to have a great influence on the stoichiometry, orientation growth, and grain morphology of the as‐prepared BaM films. With moderate oxygen partial pressure during sputtering, in‐plane c‐axis highly oriented BaM films were obtained. The films showed strong magnetic anisotropy with a high hysteresis loop squareness (Mr/Ms of 0.96) along in‐plane easy axis and a low Mr/Ms of 0.05 along in‐plane hard axis. Rocking curves and pole figures were utilized to reveal the epitaxial‐like orientation relationship of the BaM films relative to the sapphire substrates, as well as the orientation growth dispersion of the hexagonal platelet‐shaped grains in BaM films.

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(h 0 \bar{h} 0)

peak intensities, suggesting very low levels of in‐plane orientation.…”

Section: Resultsmentioning

confidence: 85%

“…21 Previous studies have shown that the a-Fe 2 O 3 phase plays a critical role in the orientation growth of the BaM films. [22][23][24] In contrast, the film deposited without oxygen addition shows low ðh0 h0Þ peak intensities, suggesting very low levels of in-plane orientation. In fact, this phenomenon has been observed elsewhere.…”

Section: Methodsmentioning

confidence: 96%

Orientation Growth and Magnetic Properties of BaM Hexaferrite Films Deposited by Direct Current Magnetron Sputtering

Zhang

Yue

2015

J. Am. Ceram. Soc.

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“…to be used as perpendicular magnetic recording media to replace Co-Cr thin films 9 10 . Up to now, OCA BaM films have been extensively studied and successfully fabricated by different methods, such as molecular beam epitaxy (MBE) 11 12 , liquid phase epitaxy (LPE) 13 , alternating target laser ablation deposition (ARLAD) 14 15 , pulsed laser deposition (PLD) 16 17 18 , radio frequency (RF) magnetron sputtering 19 20 21 , spin-coating 22 23 24 and so on. Utilizing an external magnetic biasing field to induce the alignment of c -axes of the BaM particles, instead of the epitaxial growth methods mentioned above, has also been adopted and includes screen printing (SP) 25 26 and electrophoretic deposition (EPD) 27 , to name a few.…”

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confidence: 99%

Epitaxially grown BaM hexaferrite films having uniaxial axis in the film plane for self-biased devices

Zhang

Meng

Song

et al. 2017

Sci Rep

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Barium hexaferrite (BaM) films with in-plane c-axis orientation are promising and technically important materials for self-biased magnetic microwave devices. In this work, highly oriented BaM films with different thickness and an in-plane easy axis (c-axis) of magnetization were grown on a-plane single-crystal sapphire substrates by direct current magnetron sputtering. A procedure involving seed layers, layer-by-layer annealing was adopted to reduce the substrate-induced strains and allow for the growth of thick (~3.44 μm) films. The epitaxial growth of the BaM film on sapphire was revealed by high-resolution transmission electron microscopy with dislocations being observed at the film-substrate interface. The orientation was also verified by X-ray diffraction and more notably, polarized Raman scattering. The magnetic properties and ferromagnetic resonant frequencies were experimentally characterized by a vibrating sample magnetometry and a frequency-swept ferromagnetic resonant flip-chip technique, respectively. The micron-thick BaM films exhibited a large remanence ratio of 0.92 along in-plane easy axis and a small one of 0.09 for the in-plane hard axis loop measurement. The FMR frequency was 50.3 GHz at zero field and reached 57.9 GHz under a magnetic field of 3 kOe, indicating that the epitaxial BaM films with strong self-biased behaviors have good electromagnetic properties in millimeter-wave range.

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Surface phase diagrams of pristine and hydroxylated barium hexaferrite surfaces from first-principles atomistic thermodynamics

Kokalj

Herrero-Saboya

Makovec

et al. 2023

Applied Surface Science

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Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

Cited by 6 publications

References 22 publications

Orientation Growth and Magnetic Properties of BaM Hexaferrite Films Deposited by Direct Current Magnetron Sputtering

Orientation Growth and Magnetic Properties of BaM Hexaferrite Films Deposited by Direct Current Magnetron Sputtering

Epitaxially grown BaM hexaferrite films having uniaxial axis in the film plane for self-biased devices

Surface phase diagrams of pristine and hydroxylated barium hexaferrite surfaces from first-principles atomistic thermodynamics

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