Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

Riedl, Christian; Coletti, Camilla; Iwasaki, Takayuki; Zakharov, Alexei; Starke, Ulrich

doi:10.1103/physrevlett.103.246804

Cited by 998 publications

(1,221 citation statements)

References 27 publications

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“…The growth mechanism may be similar to that for graphene fabricated in argon or disilene environments. 32,33 The height difference between the h-BN and graphene domains is 0.23 nm, and the two domains are atomically connected to each other with the same orientation.…”

Section: Resultsmentioning

confidence: 99%

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

et al. 2015

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Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal metals or metal foils by chemical vapor deposition (CVD).However, once fabricated on metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on metal foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 ℃ using borazine molecules.Second, when heated above 1150 ℃ in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene domains possess the same orientation as the h-BN layer, resulting in a single-crystal h-BN/graphene lateral structure on a whole sample area. For temperatures above 1600 ℃ , the single-crystal h-BN layer was completely replaced by the single-crystal graphene layer. The crystalline structure, electronic band structure, and atomic structure of the h-BN/graphene lateral structure were studied by using low energy electron diffraction, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy, respectively. The h-BN/graphene lateral structure fabricated on a wide-gap semiconductor substrate can be directly applied to devices without a further transfer process, as reported for epitaxial graphene on a SiC substrate.

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Section: Resultsmentioning

confidence: 99%

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

et al. 2015

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“…Previous studies [8][9] show that hydrogen exposures can have a pronounced effect on the carbon buffer layer and a model of hydrogen intercalation was suggested. In addition, the hydrogenation mechanism was demonstrated [8][9] to be reversible so a monolayer graphene plus carbon buffer layer sample was transformed to a carbon buffer layer free bi-layer graphene sample and vice versa.…”

Section: Introductionmentioning

confidence: 99%

“…Elimination of the carbon buffer layer [8][9] can be one way to produce a more ideal material, i.e., "free standing"-like graphene on the SiC substrate, for future carbon-based electronic devices. Previous studies [8][9] show that hydrogen exposures can have a pronounced effect on the carbon buffer layer and a model of hydrogen intercalation was suggested.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen intercalation of graphene grown on 6H-SiC(0001)

et al. 2011

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Atomic hydrogen exposures on a monolayer graphene grown on the SiC (0001) ARPES and energy filtered XPEEM investigations of the electron band structure confirm that after hydrogenation the single -band characteristic of monolayer graphene is replaced by two -bands that represent bi-layer graphene. Annealing an intercalated sample, representing bi-layer graphene, to a temperature of 850 ºC, or higher, reestablishes the monolayer graphene with a buffer layer on SiC(0001).

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“…The growth of large‐area high‐quality graphene films is fundamental for the upcoming graphene applications. Chemical vapour deposition (CVD) method offers good prospects to produce large‐size graphene films due to its simplicity, controllability and cost‐efficiency 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75. Many researches have verified that graphene can be catalytically grown on metallic substrates, like ruthenium (Ru),13, 14 iridium (Ir),15, 16 platinum (Pt),17, 18, …”

Section: Introductionmentioning

confidence: 99%

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

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The exceptional properties of graphene make it a promising candidate in the development of next‐generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of large‐sized single‐crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrial‐level wafer‐scale or beyond (e.g. 30 cm in diameter) single‐crystal graphene. Another possible way to obtain large single‐crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large single‐crystal graphene, and is also of great significance to realize large‐scale production of graphene films (fast growth is more time‐efficient and cost‐effective), which is likely to accelerate various graphene applications in industry.

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Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

Cited by 998 publications

References 27 publications

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

Hydrogen intercalation of graphene grown on 6H-SiC(0001)

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

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