2022
DOI: 10.1016/j.jallcom.2022.166100
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Quasi-ohmic contact formation assisted by the back contact with Cu2Te nanoparticles@reduced graphene oxide composites for highly efficient CdTe solar cells

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Cited by 9 publications
(8 citation statements)
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“…The WFs of MXene samples before and after contacting with the Au thin‐film substrate are measured by Kelvin probe force microscopy (KPFM), as shown in Figure 2g,h. The WF can be calculated from the contact potential difference ( V CPD ) based on the equation VCPD = ΦsampleΦtipq${V_{{\rm{CPD}}}}\; = \;\frac{{{\Phi _{{\rm{sample}}}} - {\Phi _{{\rm{tip}}}}}}{q}$, [ 36 ] where Φ sample is the WF of the sample, Φ tip is the WF of the probe, q is the elementary charge, and the reference material is Au (WF of ≈5.1 eV [ 37 ] ). The dark and white arrows in Figure S3a (Supporting Information) represent the V CPDs of the probe with Ti 3 C 2 T x MXene and Si substrate, corresponding to 630 and 665 mV, respectively.…”
Section: Resultsmentioning
confidence: 99%
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“…The WFs of MXene samples before and after contacting with the Au thin‐film substrate are measured by Kelvin probe force microscopy (KPFM), as shown in Figure 2g,h. The WF can be calculated from the contact potential difference ( V CPD ) based on the equation VCPD = ΦsampleΦtipq${V_{{\rm{CPD}}}}\; = \;\frac{{{\Phi _{{\rm{sample}}}} - {\Phi _{{\rm{tip}}}}}}{q}$, [ 36 ] where Φ sample is the WF of the sample, Φ tip is the WF of the probe, q is the elementary charge, and the reference material is Au (WF of ≈5.1 eV [ 37 ] ). The dark and white arrows in Figure S3a (Supporting Information) represent the V CPDs of the probe with Ti 3 C 2 T x MXene and Si substrate, corresponding to 630 and 665 mV, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…After adding Ti 3 C 2 T x MXene nanosheets, the rectification ratio rises from 3.11 to 134 (±1 V in Figure S5, Supporting Information). Based on the Shockley equation J = Jnormalofalse[exp(qVηkT) 1false]$J\;\; = \;J{\rm{o}}[\exp \left( {\frac{{qV}}{{\eta kT}}} \right)\; - \;1]$, [ 36 ] where V is the applied voltage, k is the Boltzmann constant, T is the Kelvin temperature, J o is the dark saturation current density, and η is the Schottky junction diode ideality factor. The J o and η of FTTA PDs are 4.06 × 10 −3 mA cm −2 and 4.3, respectively, which are significantly reduced compared to those of FTA PDs (4.21 mA cm −2 and 10.3).…”
Section: Resultsmentioning
confidence: 99%
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